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titleEstimation of Breakdown Electric-Field Strength While Reflecting Local Structures of SiO2 Gate Dielectrics Using First-Principles Molecular Orbital Calculation Technique
DOIinfo:doi/10.1143/JJAP.51.04DA07
Author(jpn)関, 洋; 渋谷, 寧浩; 小林, 大輔; 野平, 博司; 泰岡, 顕治; 廣瀬, 和之
Author(eng)Seki, Hiroshi; Shibuya, Yasuhiro; Kobayashi, Daisuke; Nohira, Hiroshi; Yasuoka, Kenji; Hirose, Kazuyuki
Author Affiliation(jpn)慶應義塾大学; 東京都市大学; 宇宙航空研究開発機構宇宙科学研究所(JAXA)(ISAS); 東京都市大学; 慶應義塾大学; 宇宙航空研究開発機構宇宙科学研究所(JAXA)(ISAS)
Author Affiliation(eng)School of Science for Open and Environmental System, Graduate School of Science and Technology, Keio University; Electrical and Electronic Engineering, Graduate School of Engineering, Tokyo City University; Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency (JAXA)(ISAS); Electrical and Electronic Engineering, Graduate School of Engineering, Tokyo City University; School of Science for Open and Environmental System, Graduate School of Science and Technology, Keio University; Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency (JAXA)(ISAS)
Issue Date2012-04
PublisherThe Japan Society of Applied Physics
Publication titleJapanese Journal of Applied Physics
Volume51
Issue4
Start page04DA07
Publication date2012-04
Languageeng
DescriptionAccepted: 2011-12-02
Document TypeJournal Article
JAXA Category学術雑誌論文
ISSN0021-4922
NCIDAA12295836
SHI-NOSA1003639000
URIhttps://repository.exst.jaxa.jp/dspace/handle/a-is/12150


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