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Impacts of proton irradiation on optical and electrical properties of Cu(In,Ga)Se2 thin films and solar cells
https://jaxa.repo.nii.ac.jp/records/4301
https://jaxa.repo.nii.ac.jp/records/4301c514f7cc-e60d-457a-a8f2-b465f9d1aa1e
名前 / ファイル | ライセンス | アクション |
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61889007.pdf (377.3 kB)
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Item type | 会議発表論文 / Conference Paper(1) | |||||
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公開日 | 2015-03-26 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Impacts of proton irradiation on optical and electrical properties of Cu(In,Ga)Se2 thin films and solar cells | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | CIGS solar cells | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | proton irradiation | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | degradation properties | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_5794 | |||||
資源タイプ | conference paper | |||||
著者 |
Sugiyama, M.
× Sugiyama, M.× Sharon, L. J.× Sakakura, H.× Hirose, Y.× Tsunoda, I.× Takakura, K× Sugiyama, M.× Sharon, L. J.× Sakakura, H.× Hirose, Y.× Tsunoda, I.× Takakura, K |
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著者所属 | ||||||
東京理科大学 | ||||||
著者所属 | ||||||
東京理科大学 | ||||||
著者所属 | ||||||
東京理科大学 | ||||||
著者所属 | ||||||
東京理科大学 | ||||||
著者所属 | ||||||
熊本高等専門学校 | ||||||
著者所属 | ||||||
熊本高等専門学校 | ||||||
著者所属(英) | ||||||
en | ||||||
Tokyo University of Science | ||||||
著者所属(英) | ||||||
en | ||||||
Tokyo University of Science | ||||||
著者所属(英) | ||||||
en | ||||||
Tokyo University of Science | ||||||
著者所属(英) | ||||||
en | ||||||
Tokyo University of Science | ||||||
著者所属(英) | ||||||
en | ||||||
Kumamoto National College of Technology | ||||||
著者所属(英) | ||||||
en | ||||||
Kumamoto National College of Technology | ||||||
出版者 | ||||||
出版者 | 宇宙航空研究開発機構(JAXA) | |||||
出版者(英) | ||||||
出版者 | Japan Aerospace Exploration Agency (JAXA) | |||||
書誌情報 |
宇宙航空研究開発機構特別資料 en : JAXA Special Publication 巻 JAXA-SP-12-008E, p. 38-41, 発行日 2013-03-29 |
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抄録(英) | ||||||
内容記述タイプ | Other | |||||
内容記述 | The optical and electrical properties of proton irradiated Cu(In,Ga)Se2 (CIGS) solar cells and the thin films that compose the CIGS solar cell structure were investigated. The transmittance and resistivity of transparent conducting oxide window layers remained constant for a fluence of up to 3 × 10(exp 15) cm(exp -2). For CIGS thin films, the number of non-radiative recombination center increases under proton irradiation. In CIGS solar cells, decreasing JSC reflected the degradation of the depletion layer of the CdS/CIGS interface. These results constitute the first step in clarifying the degradation mechanism of CIGS solar cells. | |||||
内容記述 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 形態: カラー図版あり | |||||
内容記述(英) | ||||||
内容記述タイプ | Other | |||||
内容記述 | Physical characteristics: Original contains color illustrations | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 1349-113X | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA11984031 | |||||
資料番号 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 資料番号: AA0061889007 | |||||
レポート番号 | ||||||
内容記述タイプ | Other | |||||
内容記述 | レポート番号: JAXA-SP-12-008E |