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Other TitleRadiation effects on light emitting diodes and semiconductor lasers
Author(jpn)権田, 俊一
Author(eng)Gonda, Shunichi
Author Affiliation(jpn)福井工業大学
Author Affiliation(eng)Fukui University of Technology
Issue Date2009-06
PublisherInstitute of Space and Astronautical Science, Japan Aerospace Exploration Agency (JAXA)
Publication titleProceedings of ISAS research meeting on High Temperature Electronics
Publication date2009-06
AbstractThe effects of proton irradiation on the characteristics of LED and semiconductor lasers were discussed. In both devices small changes of Current-Voltage characteristics were observed. The light output of LED begins to decrease at a specific proton fluence. The spectra do not change in shape and the luminous intensity decreases. In semiconductor lasers the threshold currents increase with increasing proton fluence. Normalized threshold current is proportional to proton fluence. Proportional coefficient K (damage factor) is dependent on irradiation direction, laser materials and proton energy. These phenomena can be explained using the increase of nonradiative recombination centers made by irradiation. Anneal effects by the forward current were observed.
Description会議情報: 第19回高温エレクトロニクス研究会(2009年3月12日, 宇宙航空研究開発機構宇宙科学研究本部相模原キャンパス)
Meeting Information: The 19th ISAS research meeting on High Temperature Electronics (Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency (JAXA), March 12, 2009)
KeywordsLED, Semiconductor Lasers, Proton Irradiation, Radiation Hardness; LED、半導体レーザ、プロトン照射、放射線耐性
Document TypeConference Paper
JAXA Categoryシンポジウム・研究会

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