JAXA Repository / AIREX 未来へ続く、宙(そら)への英知

There are no files associated with this item.

Other TitleSingle event effects: Radiation effects on semiconductor devices
Author(jpn)小林, 大輔
Author(eng)Kobayashi, Daisuke
Author Affiliation(jpn)宇宙航空研究開発機構宇宙科学研究本部
Author Affiliation(eng)Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency (JAXA)(ISAS)
Issue Date2009-06
PublisherInstitute of Space and Astronautical Science, Japan Aerospace Exploration Agency (JAXA)
Publication titleProceedings of ISAS research meeting on High Temperature Electronics
Publication date2009-06
AbstractRadiation has crucial influences on reliability of semiconductor devices, causing their temporary and permanent failures. "Single event effects" are .one of important radiation effects for device reliability assessments. They are induced by only single particles of corpuscular radiation; highenergetic subatomic particles like alpha-particles and heavy ions. Among the single event effects, the following ones are surveyed in terms of their temperature dependence: (1) radiation-induced transient currents: transient currents observed in a pn-junction biased constantly in the reverse direction. (2) single-event transients: voltage transients in digital circuits. (3) single-event upsets: data upsets in memory elements, SRAM cells. Literatures indicate that temperature-dependent carrier-mobility degradation is one of key physical mechanisms determining temperature dependence of these single event effects.
Description会議情報: 第19回高温エレクトロニクス研究会(2009年3月12日, 宇宙航空研究開発機構宇宙科学研究本部相模原キャンパス)
Meeting Information: The 19th ISAS research meeting on High Temperature Electronics (Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency (JAXA), March 12, 2009)
Document TypeConference Paper
JAXA Categoryシンポジウム・研究会

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.