JAXA Repository / AIREX 未来へ続く、宙(そら)への英知

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titleIon-Implanted GaN-HEMTs for High Temperature Operation
Other Titleイオン注入GaN-HEMTの高温動作
Author(jpn)野本, 一貴; 中村, 徹
Author(eng)Nomoto, Kazuki; Nakamura, Toru
Author Affiliation(jpn)法政大学; 法政大学
Author Affiliation(eng)Hosei University; Hosei University
Issue Date2010-07
Publisher宇宙航空研究開発機構宇宙科学研究所
Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency (JAXA)
Publication title高温エレクトロニクス研究会
Proceedings of ISAS research meeting on High Temperature Electronics
Volume20
Start page49
End page63
Publication date2010-07
Languageeng
AbstractMeeting Information: The 20th ISAS research meeting on High Temperature Electronics (March 24, 2010. Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency (JAXA)), Sagamihara, Kanagawa Japan
会議情報: 第20回高温エレクトロニクス研究会(2010年3月24日, 宇宙航空研究開発機構宇宙科学研究本部)
Document TypeConference Paper
JAXA Categoryシンポジウム・研究会
NCIDAA11987120
SHI-NOAA0064728004
URIhttps://repository.exst.jaxa.jp/dspace/handle/a-is/18084


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