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title民生利用での放射線(中性子)の問題: 地上における半導体デバイスの宇宙線中性子エラー
Other TitleTerrestrial neutron-induced soft-errors in commercial memory devices and systems
Author(jpn)矢作, 保夫
Author(eng)Yahagi, Yasuo
Author Affiliation(jpn)日立製作所生産技術研究所
Author Affiliation(eng)Production Engineering Research Laboratory, Hitachi
Issue Date2009-06
PublisherInstitute of Space and Astronautical Science, Japan Aerospace Exploration Agency (JAXA)
Publication titleProceedings of ISAS research meeting on High Temperature Electronics
Publication date2009-06
AbstractScaling of semiconductor devices down to sub-100 nm technologies has raised a problem that the impact of neutron-induced errors especially on combinational logic circuits is becoming more critical. Concerning memory devices, the international standardization of test procedure for soft errors has been achieved though new neutron-induced error modes are being reported. On the other hand, various challenges on characterizing the susceptibility of combinational logic circuits to terrestrial neutron have been attempted and a standard soft-error evaluation method of logic circuits has not been achieved yet due to its complication. In this paper, test methods of terrestrial-neutron soft-errors of memory devices including field test, accelerated test by using high energy particle accelerators, and simulations are explained, and brief description of an international norm IEC61508 is given.
Description会議情報: 第19回高温エレクトロニクス研究会(2009年3月12日, 宇宙航空研究開発機構宇宙科学研究本部相模原キャンパス)
Meeting Information: The 19th ISAS research meeting on High Temperature Electronics (Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency (JAXA), March 12, 2009)
Document TypeConference Paper
JAXA Categoryシンポジウム・研究会

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