JAXA Repository / AIREX 未来へ続く、宙(そら)への英知

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Other TitleSingle event effects on SOI devices
Author(jpn)高橋, 芳浩
Author(eng)Takahashi, Yoshihiro
Author Affiliation(jpn)日本大学
Author Affiliation(eng)Nihon University
Issue Date2009-06
PublisherInstitute of Space and Astronautical Science, Japan Aerospace Exploration Agency (JAXA)
Publication titleProceedings of ISAS research meeting on High Temperature Electronics
Publication date2009-06
AbstractOne of the most detrimental effects on semiconductor devices in radiation environments are single-event effects (SEE). When a high-energy heavy ion strikes the device, electron-hole pairs are generated along the ion-track and they can create sufficient transient current to cause an incorrect device response such as a single-event upset (SEU). Silicon-on-insulator (SOI) technology has been developed to reduce SEE in devices, because it was believed that the charge collection is suppressed by the existence of a buried oxide layer. However, anomalous charge collection in a SOI device was reported, In this presentation, we show the collection mechanism of heavy-ion induced charges through an oxide layer, and the single event transient behavior of SOI-CMOS inverter in order to discuss the single event effects on SOI devices.
Description会議情報: 第19回高温エレクトロニクス研究会(2009年3月12日, 宇宙航空研究開発機構宇宙科学研究本部相模原キャンパス)
Meeting Information: The 19th ISAS research meeting on High Temperature Electronics (Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency (JAXA), March 12, 2009)
Document TypeConference Paper
JAXA Categoryシンポジウム・研究会

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