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titleScale up of In(x)Ga(1-x)As (x: 0.08-0.13) platy crystals for semiconductor laser substrates
Other TitleScale up of In(x)Ga(1-x)As (x: 0.08-0.13) platy crystals for semiconductor laser substrates
Author(jpn)木下 恭一; 植田 稔晃; 足立 聡; 荒井 康智; 依田 眞一
Author(eng)Kinoshita, Kyoichi; Ueda, Toshiaki; Adachi, Satoshi; Arai, Yasutomo; Yoda, Shinichi
Author Affiliation(jpn)宇宙航空研究開発機構; 宇宙航空研究開発機構 宇宙科学研究本部; 宇宙航空研究開発機構 宇宙科学研究本部; 宇宙航空研究開発機構 宇宙科学研究本部; 宇宙航空研究開発機構 宇宙科学研究本部
Author Affiliation(eng)Japan Aerospace Exploration Agency; Japan Aerospace Exploration Agency Institute of Space and Astronautical Science; Japan Aerospace Exploration Agency Institute of Space and Astronautical Science; Japan Aerospace Exploration Agency Institute of Space and Astronautical Science; Japan Aerospace Exploration Agency Institute of Space and Astronautical Science
Issue Date2008-02-29
PublisherJapan Aerospace Exploration Agency (JAXA)
宇宙航空研究開発機構
Publication date2008-02-29
Languageeng
AbstractWe have succeeded in growing large and high quality platy In(x)Ga(1-x)As (x: 0.08-0.13) single crystals by the Traveling Liquidus-Zone (TLZ) method. This year we studied scale up of platy crystals for commercialization of laser diodes as well as improvement of crystal quality. A 30 mm wide In(0.09)Ga(0.91)As single crystal having high quality area larger than 15 x 40 sq mm was grown. Simultaneous two platy crystals growth was also successful. These results show scale up of platy crystals and mass production of substrates are possible in principle without the change of growth configuration.
DescriptionJAXA Research and Development Report
宇宙航空研究開発機構研究開発報告
Keywordsindium gallium arsenide; single crystal; crystal growth; platy crystal; semiconductor laser; traveling liquidus zone method; scale up; improvement; convection; インジウムガリウム砒化物; 単結晶; 結晶成長; 板晶; 半導体レーザ; 溶融帯移動法; スケールアップ; 改良; 対流
Document TypeTechnical Report
JAXA Category研究開発報告
ISSN1349-1113
SHI-NOAA0063801000
Report NoJAXA-RR-07-015E
URIhttps://repository.exst.jaxa.jp/dspace/handle/a-is/29837


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