JAXA Repository / AIREX 未来へ続く、宙(そら)への英知

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titleGrowth mechanism of Si from undercooled melts
Other Title過冷却融液からのSiの成長機構
Author(jpn)長汐 晃輔; 栗林 一彦
Author(eng)Nagashio, Kosuke; Kuribayashi, Kazuhiko
Author Affiliation(jpn)宇宙航空研究開発機構 宇宙科学研究本部; 宇宙航空研究開発機構 宇宙科学研究本部
Author Affiliation(eng)Japan Aerospace Exploration Agency Institute of Space and Astronautical Science; Japan Aerospace Exploration Agency Institute of Space and Astronautical Science
Issue Date2005-03
PublisherInstitute of Space and Astronautical Science, Japan Aerospace Exploration Agency (JAXA/ISAS)
Publication title宇宙利用シンポジウム 第21回 平成16年度
Space Utilization Research: Proceedings of the Twenty-first Space Utilization Symposium
Start page9
End page12
Publication date2005-03
AbstractThe various types of facet Si dendrites observed on splat-quenched surfaces were analyzed. The growth directions of typical facet dendrites were determined to be (211), (110) and (100) using an electron backscatter pattern apparatus. It was found that both the (211) and (110) dendrites with twins were bounded by atomically smooth (111) planes. The dendrite tip shape and facet planes determined by an atomic force microscope suggest that the (100) dendrites are bounded by atomically rough (110) and (100) planes. That is, facet Si dendrites vary in their growth direction and morphology with increasing undercooling because the dendrites select atomically rough interfaces in order to promote the incorporation of atoms at high undercoolings.
Keywordssilicon; dendritic crystal; crystallography; crystal growth; splat quenching; electromagnetic levitation; supercooling; atomic force microscopy; electron backscatter diffraction; dendrite growth mechanism; シリコン; 樹枝状結晶; 結晶学; 結晶成長; 超急冷法; 電磁浮揚; 過冷却; 原子間力顕微鏡; 電子後方散乱; デンドライト成長機構
Document TypeConference Paper
JAXA Categoryシンポジウム・研究会

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