WEKO3
アイテム
{"_buckets": {"deposit": "e7275692-3e14-4167-b11d-37ca46f92804"}, "_deposit": {"created_by": 1, "id": "13732", "owners": [1], "pid": {"revision_id": 0, "type": "depid", "value": "13732"}, "status": "published"}, "_oai": {"id": "oai:jaxa.repo.nii.ac.jp:00013732", "sets": ["1646", "1891"]}, "author_link": ["126046", "126045", "126044", "126047"], "item_5_alternative_title_1": {"attribute_name": "その他のタイトル", "attribute_value_mlt": [{"subitem_alternative_title": "過冷却融液からのSiの成長機構"}]}, "item_5_biblio_info_10": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2005-03", "bibliographicIssueDateType": "Issued"}, "bibliographicPageEnd": "12", "bibliographicPageStart": "9", "bibliographic_titles": [{"bibliographic_title": "宇宙利用シンポジウム 第21回 平成16年度"}, {"bibliographic_title": "Space Utilization Research: Proceedings of the Twenty-first Space Utilization Symposium", "bibliographic_titleLang": "en"}]}]}, "item_5_description_17": {"attribute_name": "抄録(英)", "attribute_value_mlt": [{"subitem_description": "The various types of facet Si dendrites observed on splat-quenched surfaces were analyzed. The growth directions of typical facet dendrites were determined to be (211), (110) and (100) using an electron backscatter pattern apparatus. It was found that both the (211) and (110) dendrites with twins were bounded by atomically smooth (111) planes. The dendrite tip shape and facet planes determined by an atomic force microscope suggest that the (100) dendrites are bounded by atomically rough (110) and (100) planes. That is, facet Si dendrites vary in their growth direction and morphology with increasing undercooling because the dendrites select atomically rough interfaces in order to promote the incorporation of atoms at high undercoolings.", "subitem_description_type": "Other"}]}, "item_5_description_32": {"attribute_name": "資料番号", "attribute_value_mlt": [{"subitem_description": "資料番号: AA0048095003", "subitem_description_type": "Other"}]}, "item_5_publisher_8": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "宇宙航空研究開発機構宇宙科学研究本部"}]}, "item_5_publisher_9": {"attribute_name": "出版者(英)", "attribute_value_mlt": [{"subitem_publisher": "Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency (JAXA/ISAS)"}]}, "item_5_text_20": {"attribute_name": "その他キーワード", "attribute_value_mlt": [{"subitem_text_value": "固体物理学"}, {"subitem_text_value": "材料実験"}]}, "item_5_text_35": {"attribute_name": "JAXAカテゴリ", "attribute_value_mlt": [{"subitem_text_value": "JAXAカテゴリ: シンポジウム・研究会"}]}, "item_5_text_36": {"attribute_name": "JAXAカテゴリ2", "attribute_value_mlt": [{"subitem_text_value": "JAXAカテゴリ2: IS"}]}, "item_5_text_42": {"attribute_name": "シンポジウム区分", "attribute_value_mlt": [{"subitem_text_value": "シンポジウム区分: 008"}]}, "item_5_text_43": {"attribute_name": "DSpaceコレクション番号", "attribute_value_mlt": [{"subitem_text_value": "DSpaceコレクション番号: 7"}]}, "item_5_text_6": {"attribute_name": "著者所属", "attribute_value_mlt": [{"subitem_text_value": "宇宙航空研究開発機構 宇宙科学研究本部"}, {"subitem_text_value": "宇宙航空研究開発機構 宇宙科学研究本部"}]}, "item_5_text_7": {"attribute_name": "著者所属(英)", "attribute_value_mlt": [{"subitem_text_language": "en", "subitem_text_value": "Japan Aerospace Exploration Agency Institute of Space and Astronautical Science"}, {"subitem_text_language": "en", "subitem_text_value": "Japan Aerospace Exploration Agency Institute of Space and Astronautical Science"}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "metadata only access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_14cb"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "長汐, 晃輔"}], "nameIdentifiers": [{"nameIdentifier": "126044", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "栗林, 一彦"}], "nameIdentifiers": [{"nameIdentifier": "126045", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Nagashio, Kosuke", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "126046", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kuribayashi, Kazuhiko", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "126047", "nameIdentifierScheme": "WEKO"}]}]}, "item_keyword": {"attribute_name": "キーワード", "attribute_value_mlt": [{"subitem_subject": "シリコン", "subitem_subject_scheme": "Other"}, {"subitem_subject": "樹枝状結晶", "subitem_subject_scheme": "Other"}, {"subitem_subject": "結晶学", "subitem_subject_scheme": "Other"}, {"subitem_subject": "結晶成長", "subitem_subject_scheme": "Other"}, {"subitem_subject": "超急冷法", "subitem_subject_scheme": "Other"}, {"subitem_subject": "電磁浮揚", "subitem_subject_scheme": "Other"}, {"subitem_subject": "過冷却", "subitem_subject_scheme": "Other"}, {"subitem_subject": "原子間力顕微鏡", "subitem_subject_scheme": "Other"}, {"subitem_subject": "電子後方散乱", "subitem_subject_scheme": "Other"}, {"subitem_subject": "デンドライト成長機構", "subitem_subject_scheme": "Other"}, {"subitem_subject": "silicon", "subitem_subject_language": "en", "subitem_subject_scheme": "Other"}, {"subitem_subject": "dendritic crystal", "subitem_subject_language": "en", "subitem_subject_scheme": "Other"}, {"subitem_subject": "crystallography", "subitem_subject_language": "en", "subitem_subject_scheme": "Other"}, {"subitem_subject": "crystal growth", "subitem_subject_language": "en", "subitem_subject_scheme": "Other"}, {"subitem_subject": "splat quenching", "subitem_subject_language": "en", "subitem_subject_scheme": "Other"}, {"subitem_subject": "electromagnetic levitation", "subitem_subject_language": "en", "subitem_subject_scheme": "Other"}, {"subitem_subject": "supercooling", "subitem_subject_language": "en", "subitem_subject_scheme": "Other"}, {"subitem_subject": "atomic force microscopy", "subitem_subject_language": "en", "subitem_subject_scheme": "Other"}, {"subitem_subject": "electron backscatter diffraction", "subitem_subject_language": "en", "subitem_subject_scheme": "Other"}, {"subitem_subject": "dendrite growth mechanism", "subitem_subject_language": "en", "subitem_subject_scheme": "Other"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "conference paper", "resourceuri": "http://purl.org/coar/resource_type/c_5794"}]}, "item_title": "Growth mechanism of Si from undercooled melts", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Growth mechanism of Si from undercooled melts", "subitem_title_language": "en"}]}, "item_type_id": "5", "owner": "1", "path": ["1646", "1891"], "permalink_uri": "https://jaxa.repo.nii.ac.jp/records/13732", "pubdate": {"attribute_name": "公開日", "attribute_value": "2015-03-26"}, "publish_date": "2015-03-26", "publish_status": "0", "recid": "13732", "relation": {}, "relation_version_is_last": true, "title": ["Growth mechanism of Si from undercooled melts"], "weko_shared_id": -1}
Growth mechanism of Si from undercooled melts
https://jaxa.repo.nii.ac.jp/records/13732
https://jaxa.repo.nii.ac.jp/records/1373230d992da-f9ce-4c3d-a885-633baae91b48
Item type | 会議発表論文 / Conference Paper(1) | |||||
---|---|---|---|---|---|---|
公開日 | 2015-03-26 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Growth mechanism of Si from undercooled melts | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | シリコン | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 樹枝状結晶 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 結晶学 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 結晶成長 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 超急冷法 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 電磁浮揚 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 過冷却 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 原子間力顕微鏡 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 電子後方散乱 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | デンドライト成長機構 | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | silicon | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | dendritic crystal | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | crystallography | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | crystal growth | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | splat quenching | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | electromagnetic levitation | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | supercooling | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | atomic force microscopy | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | electron backscatter diffraction | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | dendrite growth mechanism | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_5794 | |||||
資源タイプ | conference paper | |||||
アクセス権 | ||||||
アクセス権 | metadata only access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
その他のタイトル | ||||||
その他のタイトル | 過冷却融液からのSiの成長機構 | |||||
著者 |
長汐, 晃輔
× 長汐, 晃輔× 栗林, 一彦× Nagashio, Kosuke× Kuribayashi, Kazuhiko |
|||||
著者所属 | ||||||
宇宙航空研究開発機構 宇宙科学研究本部 | ||||||
著者所属 | ||||||
宇宙航空研究開発機構 宇宙科学研究本部 | ||||||
著者所属(英) | ||||||
en | ||||||
Japan Aerospace Exploration Agency Institute of Space and Astronautical Science | ||||||
著者所属(英) | ||||||
en | ||||||
Japan Aerospace Exploration Agency Institute of Space and Astronautical Science | ||||||
出版者 | ||||||
出版者 | 宇宙航空研究開発機構宇宙科学研究本部 | |||||
出版者(英) | ||||||
出版者 | Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency (JAXA/ISAS) | |||||
書誌情報 |
宇宙利用シンポジウム 第21回 平成16年度 en : Space Utilization Research: Proceedings of the Twenty-first Space Utilization Symposium p. 9-12, 発行日 2005-03 |
|||||
抄録(英) | ||||||
内容記述タイプ | Other | |||||
内容記述 | The various types of facet Si dendrites observed on splat-quenched surfaces were analyzed. The growth directions of typical facet dendrites were determined to be (211), (110) and (100) using an electron backscatter pattern apparatus. It was found that both the (211) and (110) dendrites with twins were bounded by atomically smooth (111) planes. The dendrite tip shape and facet planes determined by an atomic force microscope suggest that the (100) dendrites are bounded by atomically rough (110) and (100) planes. That is, facet Si dendrites vary in their growth direction and morphology with increasing undercooling because the dendrites select atomically rough interfaces in order to promote the incorporation of atoms at high undercoolings. | |||||
資料番号 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 資料番号: AA0048095003 |