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半導体結晶の溶液成長における固液界面形態安定性に関する研究成果報告
https://jaxa.repo.nii.ac.jp/records/2306
https://jaxa.repo.nii.ac.jp/records/23065fb0e469-64d1-446d-b2b5-62a550ecf912
名前 / ファイル | ライセンス | アクション |
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48516000.pdf (5.2 MB)
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Item type | テクニカルレポート / Technical Report(1) | |||||
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公開日 | 2015-03-26 | |||||
タイトル | ||||||
タイトル | 半導体結晶の溶液成長における固液界面形態安定性に関する研究成果報告 | |||||
言語 | ||||||
言語 | jpn | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 形態安定性 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 界面安定性 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 半導体結晶 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | ステップカイネティック係数 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | CdZnTe結晶 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 結晶成長 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 液相エピタキシー | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 導電性流体 | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | morphological stability | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | interface stability | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | semiconductor crystal | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | step kinetic coefficient | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | CdZnTe crystal | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | crystal growth | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | liquid phase epitaxy | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | conducting fluid | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_18gh | |||||
資源タイプ | technical report | |||||
その他のタイトル(英) | ||||||
その他のタイトル | Morphological stability of semiconductor crystal in solution growth | |||||
著者 |
稲富, 裕光
× 稲富, 裕光× Wang, Yue× 菊池, 正則× 中村, 龍太× 内田, 祐樹× 神保, 至× Inatomi, Yuko× Wang, Yue× Kikuchi, Masanori× Nakamura, Ryuta× Uchida, Yuki× Jinbo, Itaru |
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著者所属 | ||||||
宇宙航空研究開発機構 宇宙科学研究本部 | ||||||
著者所属 | ||||||
Kunming Institute of Physics | ||||||
著者所属 | ||||||
東海大学 | ||||||
著者所属 | ||||||
アイ・エイチ・アイ・エアロスペース | ||||||
著者所属 | ||||||
東海大学 | ||||||
著者所属 | ||||||
東海大学 | ||||||
著者所属(英) | ||||||
en | ||||||
Japan Aerospace Exploration Agency Institute of Space and Astronautical Science | ||||||
著者所属(英) | ||||||
en | ||||||
Kunming Institute of Physics | ||||||
著者所属(英) | ||||||
en | ||||||
Tokai University | ||||||
著者所属(英) | ||||||
en | ||||||
IHI Aerospace Co. Ltd. | ||||||
著者所属(英) | ||||||
en | ||||||
Tokai University | ||||||
著者所属(英) | ||||||
en | ||||||
Tokai University | ||||||
出版者 | ||||||
出版者 | 宇宙航空研究開発機構 | |||||
出版者(英) | ||||||
出版者 | Japan Aerospace Exploration Agency (JAXA) | |||||
書誌情報 |
宇宙航空研究開発機構研究開発報告 en : JAXA Research and Development Report 巻 JAXA-RR-04-055, 発行日 2005-03-31 |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | 本報告では、半導体結晶の溶液成長過程における以下の研究成果を述べる。(1)半導体結晶の溶液成長過程における固液界面の形態変化に及ぼす基板結晶の面方位の影響を調べるために近赤外顕微鏡を使ったその場観察実験が実施された。その結果、対流を抑制することでGaP/GaP成長界面のステップカイネティクス係数の面方位依存性が得られ、結晶成長時におけるマクロステップの挙動が評価された。また、GaAs(x)P(1-x)/GaPへテロLPE成長初期の固液界面の表面形態変化が基板表面の面方位依存性の視点から議論された。(2)静磁場THM法によりTe溶液から育成したCdZnTe結晶の成長界面が急冷法によって調べられた。その結果、浮力対流を抑制することで速い引き下げ速度でも良質なCdZnTe成長結晶を得られることを示した。 | |||||
抄録(英) | ||||||
内容記述タイプ | Other | |||||
内容記述 | The following results are described in the present report. (1) In situ observation experiments of semiconductor solution growth using a near-infrared microscope have been performed to investigate an influence of surface orientation of a substrate crystal upon the morphological change of the solid/liquid (S/L) interface. The orientation dependence of step kinetic coefficient at the interface in GaP/GaP growth was obtained under a reduced convection condition in order to evaluate a behavior of macrosteps during the growth. A morphological change of a S/L interface at the early stage of GaAsxP1-x/GaP hetero-LPE growth was also discussed from the view point of the surface orientation dependence. (2) A S/L interface of a CdZnTe crystal grown from Te solution with a traveling heater method under a static magnetic field was investigated by a quenching technique during the crystal growth. The results shows that a high quality CdZnTe crystal can be obtained even with high growth rate by damping the buoyancy convection. | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 1349-1113 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA1192675X | |||||
資料番号 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 資料番号: AA0048516000 | |||||
レポート番号 | ||||||
内容記述タイプ | Other | |||||
内容記述 | レポート番号: JAXA-RR-04-055 |