JAXA Repository / AIREX 未来へ続く、宙(そら)への英知

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Other TitleCharacteristics of the formation of silicon dioxide by atomic oxygen in LEO
Author(jpn)横田 久美子; 田川 雅人; 吉越 章隆; 寺岡 有殿
Author(eng)Yokota, Kumiko; Tagawa, Masahito; Yoshigoe, Akitaka; Teraoka, Yuden
Author Affiliation(jpn)神戸大学 工学部 機械工学科; 神戸大学 工学部 機械工学科; 日本原子力研究所; 日本原子力研究所
Author Affiliation(eng)Kobe University Department of Mechanical Engineering, Faculty of Engineering; Kobe University Department of Mechanical Engineering, Faculty of Engineering; Japan Atomic Energy Research Institute; Japan Atomic Energy Research Institute
Issue Date2005-03
PublisherInstitute of Space and Astronautical Science, Japan Aerospace Exploration Agency (JAXA/ISAS)
Publication title宇宙利用シンポジウム 第21回 平成16年度
Space Utilization Research: Proceedings of the Twenty-first Space Utilization Symposium
Start page166
End page167
Publication date2005-03
AbstractThe oxide film formed on Si(001) in a simulated Low Earth Orbit (LEO) space environment was analyzed by Synchrotron Radiation PhotoElectron Spectroscopy (SR-PES). SR-PES results clearly indicated that the amount of suboxides at the Si/SiO2 interface formed in a simulated LEO environment at room temperature was much lower than that formed by an ordinary high-temperature oxidation process.
Keywordsatomic oxygen; oxide film; Earth orbital environment; Synchrotron radiation; silicon; suboxide; low temperature oxidation; oxidation; oxide film growth; film quality analysis; 原子状酸素; 酸化膜; 地球軌道環境; シンクロトロン放射; シリコン; サブオキサイド; 低温酸化; 酸化; 酸化膜成長; 膜質解析
Document TypeConference Paper
JAXA Categoryシンポジウム・研究会

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