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46955000.pdf2.31 MB
title化合物半導体結晶成長解析
Other TitleNumerical analysis of crystal growth of compound semiconductor
Author(jpn)東洋大学
Author(eng)Toyo University
Author Affiliation(jpn)東洋大学
Author Affiliation(eng)Toyo University
Issue Date2004-03-25
PublisherJapan Aerospace Exploration Agency (JAXA)
宇宙航空研究開発機構
Publication date2004-03-25
Languagejpn
AbstractCrystal growth simulations of a binary InAs-GaAs semiconductor were carried out. The following problems were investigated; 1) Development of an advanced simulation code for the analysis of the velocity, temperature, concentration fields and interfacial shapes by TLZ method and 2) Analysis of the crystal growth process under terrestrial gravity and microgravity conditions.
化合物半導体InGaAs結晶成長を行うことを想定し、TLZ法における数値シミュレーションを行い、以下の項目について解析をした。1)地上重力場での結晶成長解析(結晶径20mm)、2)微小重力場での結晶成長解析(結晶径20mm)、3)地上重力場での結晶成長解析(結晶径10mm)、4)微小重力場での結晶成長解析(結晶径10mm)。
DescriptionJAXA Contract Report
宇宙航空研究開発機構契約報告
KeywordsInGaAs; crystal growth; numerical analysis; compound semiconductor; TLZ method; microgravity; supercooling; thermal conductivity; InGaAs; 結晶成長; 数値解析; 化合物半導体; TLZ法; 微小重力; 過冷却; 熱伝導度
Document TypeTechnical Report
JAXA Category契約報告
ISSN1349-1148
SHI-NOAA0046955000
Report NoJAXA-CR-03-001
URIhttps://repository.exst.jaxa.jp/dspace/handle/a-is/33069


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