JAXA Repository / AIREX 未来へ続く、宙(そら)への英知
48451000.pdf6.79 MB
titleEffects of microgravity environment on growth related properties of semiconductor alloys (InGaAs): Growth of homogeneous crystals
Author(jpn)宇宙航空研究開発機構
Author(eng)Japan Aerospace Exploration Agency
Author Affiliation(jpn)宇宙航空研究開発機構 宇宙科学研究本部 ISS科学プロジェクト室
Author Affiliation(eng)Japan Aerospace Exploration Agency ISS Science Project Office, Institute of Space and Astronautical Science
Issue Date2005-03-31
PublisherJapan Aerospace Exploration Agency (JAXA)
宇宙航空研究開発機構
Publication date2005-03-31
Languageeng
DescriptionJAXA Research and Development Report
宇宙航空研究開発機構研究開発報告
Keywordscrystal growth; traveling liquidus-zone method; silicon compound; arsenic compound; liquidus; numerical analysis; semiconductor device; microgravity; Si-Ge crystal; indium gallium arsenide; crystal growth model; temperature gradient; material balance; fluid dynamics; diffusion coefficient; 結晶成長; 飽和溶融帯移動法; シリコン化合物; 砒素化合物; 液相線; 数値解析; 半導体デバイス; 微小重力; Si-Ge結晶; インジウムガリウム砒素; 結晶成長モデル; 温度勾配; 材料バランス; 流体力学; 拡散係数
Document TypeTechnical Report
JAXA Category研究開発報告
ISSN1349-1113
SHI-NOAA0048451000
Report NoJAXA-RR-04-022E
URIhttps://repository.exst.jaxa.jp/dspace/handle/a-is/33634


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