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titleTLZ法によるIn(0.3)Ga(0.7)As基板用結晶作製
Other TitlePreparation of In(0.3)Ga(0.7)As substrates by the TLZ method
Author(jpn)木下 恭一; 緒方 康行; 足立 聡; 鶴 哲也; 宮田 浩旭; 村松 祐治; 依田 眞一
Author(eng)Kinoshita, Kyoichi; Ogata, Yasuyuki; Adachi, Satoshi; Tsuru, Tetsuya; Miyata, Hiroaki; Muramatsu, Yuji; Yoda, Shinichi
Author Affiliation(jpn)宇宙航空研究開発機構 宇宙科学研究本部; 宇宙航空研究開発機構 宇宙科学研究本部; 宇宙航空研究開発機構 宇宙科学研究本部; エイ・イー・エス; エイ・イー・エス; エイ・イー・エス; 宇宙航空研究開発機構 宇宙科学研究本部
Author Affiliation(eng)Japan Aerospace Exploration Agency Institute of Space and Astronautical Science; Japan Aerospace Exploration Agency Institute of Space and Astronautical Science; Japan Aerospace Exploration Agency Institute of Space and Astronautical Science; Advanced Engineering Services Co. Ltd.; Advanced Engineering Services Co. Ltd.; Advanced Engineering Services Co. Ltd.; Japan Aerospace Exploration Agency Institute of Space and Astronautical Science
Issue Date2005-03
PublisherInstitute of Space and Astronautical Science, Japan Aerospace Exploration Agency (JAXA/ISAS)
宇宙航空研究開発機構宇宙科学研究本部
Publication title宇宙利用シンポジウム 第21回 平成16年度
Space Utilization Research: Proceedings of the Twenty-first Space Utilization Symposium
Start page84
End page86
Publication date2005-03
Languagejpn
AbstractIn(0.3)Ga(0.7)As plate crystal growth for substrate use by the Traveling Liquidus-Zone (TLZ) method has been succeeded. Convection in a melt during crystal growth was suppressed by shaping a grown crystal into a plate with thickness of 2 mm. Two step growth; that is, an In(0.1)Ga(0.9)As crystal growth from a GaAs seed in the first step and an In(0.3)Ga(0.7)As crystal growth from an In(0.1)Ga(0.9)As seed in the second step was a key to grow In(0.3)Ga(0.7)As single crystals.
Keywordscrystal growth; traveling liquidus-zone method; diffusion; substrate; indium gallium arsenide; temperature gradient; compositional profile; seed crystal; liquid phase; solid phase; single crystal; 結晶成長; 飽和溶液帯移動法; 拡散; 基板; インジウムガリウムヒ化物; 温度勾配; 組成プロファイル; 種結晶; 液相; 固相; 単結晶
Document TypeConference Paper
JAXA Categoryシンポジウム・研究会
SHI-NOAA0048095020
URIhttps://repository.exst.jaxa.jp/dspace/handle/a-is/38116


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