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46956000.pdf4.27 MB
titleInvestigation of preparation methods of InGaAs materials for crystal growth
Other TitleInGaAs結晶成長用原料作製法の検討
Author(eng)Sumitomo Electric Industries Ltd.
Author Affiliation(jpn)住友電気工業
Author Affiliation(eng)Sumitomo Electric Industries Ltd.
Issue Date2004-03-25
PublisherJapan Aerospace Exploration Agency (JAXA)
Publication date2004-03-25
AbstractThe following researches have been carried out in order to make source materials for the TLZ-experiments, of which purpose is growth of InGaAs single crystal having uniform composition and in order to obtain the suitable experimental conditions for TLZ growth method. 1) The 3 polycrystalline source materials having average composition of x = 0.3 to 0.4 were prepared by a directional solidification method. Several starting materials for TLZ experiments were cut from the source materials, of which compositions were nondestructively measured by Raman scattering method. The diameter is 10 mm and the length is 100 mm. 2) For the TLZ experiment same experimental system and conditions as the NASDA's one were made except higher temperature gradient of 40 C/cm. Precise temperature profile measurement has been carried out. On the basis of the results the several TLZ growths were carried out. Single crystal has not been obtained yet but the composition profiles and Raman scattering were examined. 3) In order to obtain the necessary information for crystal growth, three quench experiments were carried out in the sample with 2 and 10 mm diameter.
DescriptionJAXA Contract Report
Keywordscrystal growth; InGaAs; single crystal; TLZ method; Raman scattering; temperature gradient; directional solidification; quenching; 結晶成長; InGaAs; 単結晶; TLZ法; ラマン散乱; 温度勾配; 指向性凝固; 急冷
Document TypeTechnical Report
JAXA Category契約報告
Report NoJAXA-CR-03-002E

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