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titleHigh quality In(x)Ga(1-x)As (x: 0.1-0.13) platy crystal growth for semiconductor laser substrates
Other TitleHigh quality In(x)Ga(1-x)As (x: 0.1-0.13) platy crystal growth for semiconductor laser substrates
Author(jpn)木下 恭一; 植田 稔晃; 足立 聡; 荒井 康智; 宮田 浩旭; 田中 涼太; 村松 祐治; 依田 眞一
Author(eng)Kinoshita, Kyoichi; Ueda, Toshiaki; Adachi, Satoshi; Arai, Yasutomo; Miyata, Hiroaki; Tanaka, Ryota; Muramatsu, Yuji; Yoda, Shinichi
Author Affiliation(jpn)宇宙航空研究開発機構 宇宙科学研究本部; 宇宙航空研究開発機構 宇宙科学研究本部; 宇宙航空研究開発機構 宇宙科学研究本部; 宇宙航空研究開発機構 宇宙科学研究本部; エイ・イー・エス; エイ・イー・エス; エイ・イー・エス; 宇宙航空研究開発機構 宇宙科学研究本部
Author Affiliation(eng)Japan Aerospace Exploration Agency Institute of Space and Astronautical Science; Japan Aerospace Exploration Agency Institute of Space and Astronautical Science; Japan Aerospace Exploration Agency Institute of Space and Astronautical Science; Japan Aerospace Exploration Agency Institute of Space and Astronautical Science; Advanced Engineering Services Co. Ltd.; Advanced Engineering Services Co. Ltd.; Advanced Engineering Services Co. Ltd.; Japan Aerospace Exploration Agency Institute of Space and Astronautical Science
Issue Date2007-03-30
PublisherJapan Aerospace Exploration Agency (JAXA)
宇宙航空研究開発機構
Publication date2007-03-30
Languageeng
AbstractWe have succeeded in growing large and high quality platy In(x)Ga(1-x)As (x: 0.1-0.13) single crystals by the Traveling Liquidus-Zone (TLZ) method. Among factors which affect crystal quality, the most influential factor is temperature stability at the growth region when the composition of grown crystals is in the range between In(0.1)Ga(0.9)As and In(0.13)Ga(0.87)As; when the temperature stability was better than +/- 0.1 C, compositional uniformity was 0.13 with sigma of 0.001 where sigma is the standard deviation, and 0.13 with sigma of 0.006 when the temperature stability was +/- 0.2 C. The appropriate temperatures at the feed region were between 1,170 and 1,180 C. Temperature gradient also affected crystal quality through the variation of growth rate. Temperature gradients chosen for high quality crystal growth were in the range between 25 and 28 C/cm, which were measured outside of quartz ampoules. Finally, In(0.13)Ga(0.87)As single crystals having high quality area larger than 10 x 30 sq mm were reproducibly grown. Such large and high quality bulk single crystals which can be used as substrates of laser diodes operating at the wavelength of 1.3 micrometers were grown for the first time.
DescriptionJAXA Research and Development Report
宇宙航空研究開発機構研究開発報告
Keywordstraveling liquidus-zone method; TLZ method; indium gallium arsenide; crystal growth; temperature gradient; semiconductor laser; substrate; single crystal; liquidus; crystallinity; concentration profile; temperature stability; convection; 飽和溶融帯移動法; TLD法; インジウムガリウム砒素; 結晶成長; 温度勾配; 半導体レーザ; 基板; 単結晶; 液相線; 結晶性; 濃度プロファイル; 温度安定性; 対流
Document TypeTechnical Report
JAXA Category研究開発報告
ISSN1349-1113
SHI-NOAA0063221000
Report NoJAXA-RR-06-014E
URIhttps://repository.exst.jaxa.jp/dspace/handle/a-is/39115


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