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titleHigh Doping Density/High Electric Field, Stress and Heterojunction Effects on the Characteristics of CMOS Compatible p-n Junctions
DOIinfo:doi/10.1149/1.3555103
Author(jpn)Simoen, E.; Eneman, G.; Bargallo Gonzalez, M.; 小林, 大輔; Luque Rodriguez, A.; Jimenez Tejada, J.-A.; Claeys, C.
Author(eng)Simoen, E.; Eneman, G.; Bargallo Gonzalez, M.; Kobayashi, D.; Luque Rodriguez, A.; Jimenez Tejada, J.-A.; Claeys, C.
Author Affiliation(jpn)imec; imec : ESAT-INSYS Department, Katholieke Universiteit Leuven : Fund for Scientific Research-Flanders (FWO); imec : ESAT-INSYS Department, Katholieke Universiteit Leuven; imec; imec : Departamento de Electronica y Tecnologia de los Computadores, Facultad de Ciencias, Universidad de Granada; Departamento de Electronica y Tecnologia de los Computadores, Facultad de Ciencias, Universidad de Granada; imec : ESAT-INSYS Department, Katholieke Universiteit Leuven
Author Affiliation(eng)imec; imec : ESAT-INSYS Department, Katholieke Universiteit Leuven : Fund for Scientific Research-Flanders (FWO); imec : ESAT-INSYS Department, Katholieke Universiteit Leuven; imec; imec : Departamento de Electronica y Tecnologia de los Computadores, Facultad de Ciencias, Universidad de Granada; Departamento de Electronica y Tecnologia de los Computadores, Facultad de Ciencias, Universidad de Granada; imec : ESAT-INSYS Department, Katholieke Universiteit Leuven
Issue Date2011-03-25
PublisherThe Electrochemical Society
Publication titleJournal of the Electrochemical Society
Volume158
Issue5
Start pageR27
End pageR36
Publication date2011-03-25
Languageeng
Document TypeJournal Article
JAXA Category学術雑誌論文
ISSN0013-4651
NCIDAA00697016
SHI-NOSA1002742000
URIhttps://repository.exst.jaxa.jp/dspace/handle/a-is/451


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