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titleImpact of the Ge content and recess depth on the leakage current in strained Si1-xGex/Si heterojunctions
DOIinfo:doi/10.1109/TED.2011.2148723
Author(jpn)Rodriguez, Abraham Luque; Gonzalez, Mireia Bargallo; Eneman, Geert; Claeys, Cor; 小林, 大輔; Simoen, Eddy; Tejada, Juan A. Jimenez
Author(eng)Rodriguez, Abraham Luque; Gonzalez, Mireia Bargallo; Eneman, Geert; Claeys, Cor; Kobayashi, Daisuke; Simoen, Eddy; Tejada, Juan A. Jimenez
Author Affiliation(jpn)Interuniversity Microelectronics Center; Interuniversity Microelectronics Center : Department of Electrical Engineering (ESAT)-Integrated System, Katholieke Universiteit Leuven; Interuniversity Microelectronics Center : Department of Electrical Engineering (ESAT)-Integrated System, Katholieke Universiteit Leuven : Fonds Wetenschappelijk Onderzoek-Vlaanderen; Interuniversity Microelectronics Center : Department of Electrical Engineering (ESAT)-Integrated System, Katholieke Universiteit Leuven; Interuniversity Microelectronics Center : Department of Electrical Engineering (ESAT)-Integrated System, Katholieke Universiteit Leuven; Interuniversity Microelectronics Center; Departamento de Electronica y Tecnologia de los Computadores, Facultad de Ciencias, Universidad de Granada
Author Affiliation(eng)Interuniversity Microelectronics Center; Interuniversity Microelectronics Center : Department of Electrical Engineering (ESAT)-Integrated System, Katholieke Universiteit Leuven; Interuniversity Microelectronics Center : Department of Electrical Engineering (ESAT)-Integrated System, Katholieke Universiteit Leuven : Fonds Wetenschappelijk Onderzoek-Vlaanderen; Interuniversity Microelectronics Center : Department of Electrical Engineering (ESAT)-Integrated System, Katholieke Universiteit Leuven; Interuniversity Microelectronics Center : Department of Electrical Engineering (ESAT)-Integrated System, Katholieke Universiteit Leuven; Interuniversity Microelectronics Center; Departamento de Electronica y Tecnologia de los Computadores, Facultad de Ciencias, Universidad de Granada
Issue Date2011-08
PublisherInstitute of Electrical and Electronics Engineers
Publication titleIEEE Transactions on Electron Devices
Volume58
Issue8
Start page2362
End page2370
Publication date2011-08
Languageeng
DescriptionAccepted: 2011-04-19
Document TypeJournal Article
JAXA Category学術雑誌論文
ISSN0018-9383
NCIDAA00667820
SHI-NOSA1003244000
URIhttps://repository.exst.jaxa.jp/dspace/handle/a-is/4643


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