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titleCu(In, Ga)Se2太陽電池における陽子線照射欠陥のフォトルミネッセンス解析
Other TitlePhotoluminescence analysis of proton-radiation-induced defects in Cu(In, Ga)Se2 solar cells
Author(jpn)吉田 和生; 田島 道夫; 曽根 良嗣; 川北 史朗; 仁木 栄; 櫻井 啓一郎
Author(eng)Yoshida, Kazuki; Tajima, Michio; Sone, Yoshitsugu; Kawakita, Shiro; Niki, Shigeru; Sakurai, Keiichiro
Author Affiliation(jpn)宇宙航空研究開発機構 宇宙科学研究本部; 宇宙航空研究開発機構 宇宙科学研究本部; 宇宙航空研究開発機構 宇宙科学研究本部; 宇宙航空研究開発機構 総合技術研究本部; 産業技術総合研究所 電力エネルギー研究部門; 産業技術総合研究所 電力エネルギー研究部門
Author Affiliation(eng)Japan Aerospace Exploration Agency Institute of Space and Astronautical Science; Japan Aerospace Exploration Agency Institute of Space and Astronautical Science; Japan Aerospace Exploration Agency Institute of Space and Astronautical Science; Japan Aerospace Exploration Agency Institute of Space Technology and Aeronautics; National Institute of Advanced Industrial Science and Technology Energy Electronics Institute; National Institute of Advanced Industrial Science and Technology Energy Electronics Institute
Issue Date2005-06
PublisherInstitute of Space and Astronautical Science, Japan Aerospace Exploration Agency (JAXA/ISAS)
宇宙航空研究開発機構宇宙科学研究本部
Publication title第24回宇宙エネルギーシンポジウム 平成16年度
The Twenty-fourth Space Energy Symposium March 7, 2005
Start page27
End page31
Publication date2005-06
Languagejpn
AbstractCu(In,Ga)Se2 (CIGS) solar cells have the advantages of low weight and high radiation receptivity, which are quite attractive for the space application. The high radiation tolerance has been explained by the recovery effect during low-temperature annealing. However, the process of the radiation degradation and the annealing effect has not yet been clarified. We investigated the radiation-induced defects in poly-crystalline CIGS by photoluminescence (PL) spectroscopy. The proton irradiation degraded the near band-edge (1.1 eV) emission and induced the deep-level emission at 0.8 eV. We suggest that the radiation-induced defects are responsible for the deep-level emission. The heat treatment at 120 C restored the 1.1 eV emission and reduced the 0.8 eV band. After annealing, the intensity of the 1.1 eV emission from CIGS solar cells became higher than that from CIGS thin films. We suggest that this phenomenon is caused by the difference in the surface/interface conditions of the CIGS layers.
Keywordssolar cell; radiation tolerance; thin film; aerospace environment; proton irradiation; heat treatment; CIGS solar cell; polycrystal; vapor phase epitaxy; photoluminescence; emission intensity; 太陽電池; 放射線耐性; 薄膜; 航空宇宙環境; 陽子照射; 熱処理; CIGS太陽電池; 多結晶; 気相エピタキシー; フォトルミネッセンス; 発光強度
Document TypeConference Paper
JAXA Categoryシンポジウム・研究会
SHI-NOAA0049120006
URIhttps://repository.exst.jaxa.jp/dspace/handle/a-is/46494


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