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title選択励起フォトルミネッセンスによるCu(In, Ga)Se2太陽電池の放射線照射効果の解析
Other TitleRadiation effects on Cu(In, Ga)Se2 solar cells evaluated by selective excitation photoluminescence
Author(jpn)吉田 和生; 田島 道夫; 曽根 良嗣; 川北 史朗; 仁木 栄; 櫻井 啓一郎
Author(eng)Yoshida, Kazuki; Tajima, Michio; Sone, Yoshitsugu; Kawakita, Shiro; Niki, Shigeru; Sakurai, Keiichiro
Author Affiliation(jpn)宇宙航空研究開発機構 宇宙科学研究本部; 宇宙航空研究開発機構 宇宙科学研究本部; 宇宙航空研究開発機構 宇宙科学研究本部; 宇宙航空研究開発機構 総合技術研究本部; 産業技術総合研究所 電力エネルギー研究部門; 産業技術総合研究所 電力エネルギー研究部門
Author Affiliation(eng)Japan Aerospace Exploration Agency Institute of Space and Astronautical Science; Japan Aerospace Exploration Agency Institute of Space and Astronautical Science; Japan Aerospace Exploration Agency Institute of Space and Astronautical Science; Japan Aerospace Exploration Agency Institute of Space Technology and Aeronautics; National Institute of Advanced Industrial Science and Technology Energy Electronics Institute; National Institute of Advanced Industrial Science and Technology Energy Electronics Institute
Issue Date2006-06
PublisherInstitute of Space and Astronautical Science, Japan Aerospace Exploration Agency (JAXA/ISAS)
宇宙航空研究開発機構宇宙科学研究本部
Publication title第25回宇宙エネルギーシンポジウム 平成17年度
The Twenty-fifth Space Energy Symposium March 10, 2006
Start page26
End page30
Publication date2006-06
Languagejpn
AbstractCu(In,Ga)Se2 (CIGS) solar cells have the advantages of low weight and high radiation resistance, which are quite attractive for space application. The CIGS solar cells have a hetero-junction structure consisting of the window, buffer and absorber layers. In this work we investigated the radiation-induced effects on the CdS buffer and ZnO window layers of the CIGS cells using photoluminescence (PL) under selective excitation. The ZnO layers were excited by deep ultraviolet light which has higher energy than the bandgap of ZnO. The CdS layers were excited by visible light which has lower energy than the bandgap of ZnO and higher energy than that of CdS. To investigate the CIGS layers, we used the excitation light which has lower energy than the bandgap of CdS and higher energy than that of CIGS. The technique allowed us to make a nondestructive characterization of each layer. The PL spectrum of the cell before irradiation under 2.71 eV light excitation consisted of the 0.95, 1.06, 1.13 and 1.35 eV emissions. The intensity of the 1.35 eV band was decreased by about 40 percent after irradiation. Under 4.66 eV light excitation, the band-edge emission from the ZnO layer was observed at 3.40 eV for the cell before irradiation. The emission disappeared after irradiation. This proves that the proton irradiation degrades the ZnO layer. The radiation effects of the 0.38 MeV protons on the respective layers of CIGS cells were evaluated separately by selective excitation PL.
KeywordsCIGS solar cell; emission intensity; photoluminescence; radiation tolerance; proton irradiation; degradation; selective excitation; photoexcitation; optical emission spectrum; CIGS太陽電池; 発光強度; フォトルミネッセンス; 放射線耐性; 陽子照射; 劣化; 選択的励起; 光励起; 発光スペクトル
Document TypeConference Paper
JAXA Categoryシンポジウム・研究会
SHI-NOAA0049121006
URIhttps://repository.exst.jaxa.jp/dspace/handle/a-is/53873


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