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titleThe Impact of Technology Scaling on the Single-Event Transient Response of SiGe HBTs
DOIinfo:doi/10.1109/tns.2016.2633997
Author(jpn)Lourenco, Nelson E.; Fleetwood, Zachary E.; Ildefonso, Adrian; Wachter, Mason T.; Roche, Nicolas J.-H.; Khachatrian, Ani; McMorrow, Dale; Buchner, Stephen P.; Warner, Jeffrey H.; 井辻, 宏章; 小林, 大輔; 廣瀬, 和之; Paki, Pauline; Raman, Ashok; Cressler, John D.
Author(eng)Lourenco, Nelson E.; Fleetwood, Zachary E.; Ildefonso, Adrian; Wachter, Mason T.; Roche, Nicolas J.-H.; Khachatrian, Ani; McMorrow, Dale; Buchner, Stephen P.; Warner, Jeffrey H.; Itsuji, Hiroaki; Kobayashi, Daisuke; Hirose, Kazuyuki; Paki, Pauline; Raman, Ashok; Cressler, John D.
Author Affiliation(jpn)Advanced Concepts Laboratory, Georgia Tech Research Institute; School of Electrical and Computer Engineering, Georgia Institute of Technology; School of Electrical and Computer Engineering, Georgia Institute of Technology; School of Electrical and Computer Engineering, Georgia Institute of Technology; NRL; Sotera Defense; Naval Research Laboratory; Naval Research Laboratory; Naval Research Laboratory; 宇宙航空研究開発機構宇宙科学研究所(JAXA)(ISAS); 宇宙航空研究開発機構宇宙科学研究所(JAXA)(ISAS); 宇宙航空研究開発機構宇宙科学研究所(JAXA)(ISAS); Defense Threat Reduction Agency; CFD Research Corporation; School of Electrical and Computer Engineering, Georgia Institute of Technology
Author Affiliation(eng)Advanced Concepts Laboratory, Georgia Tech Research Institute; School of Electrical and Computer Engineering, Georgia Institute of Technology; School of Electrical and Computer Engineering, Georgia Institute of Technology; School of Electrical and Computer Engineering, Georgia Institute of Technology; NRL; Sotera Defense; Naval Research Laboratory; Naval Research Laboratory; Naval Research Laboratory; Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency (JAXA)(ISAS); Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency (JAXA)(ISAS); Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency (JAXA)(ISAS); Defense Threat Reduction Agency; CFD Research Corporation; School of Electrical and Computer Engineering, Georgia Institute of Technology
Issue Date2017-01
PublisherInstitute of Electrical and Electronics Engineers
Publication titleIEEE Transactions on Nuclear Science
Volume64
Issue1
Start page406
End page414
Publication date2017-01
Languageeng
Description著者人数: 15名
Accepted: 2016-11-08
KeywordsCharge collection; hardening; NanoTCAD; radiation; semiconductor process scaling,; SiGe HBT; silicongermanium technology; single-event effects (SEE); single-event transient (SET); technology scaling; two-photon absorption experiments.
Document TypeJournal Article
JAXA Category学術雑誌論文
ISSN0018-9499
NCIDAA00667999
SHI-NOSA1160320000
URIhttps://repository.exst.jaxa.jp/dspace/handle/a-is/610928


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