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titleCrystal Growth of Ternary Alloy Semiconductor and Preliminary Study for Microgravity Experiment at the International Space Station
DOIinfo:doi/10.2322/tastj.12.Ph_31
Author(jpn)阪田, 薫穂; 向井, 碧; Arivanandhan, Mukannan; Rajesh, Govindasamy; 石川, 毅彦; 稲富, 裕光; 早川, 泰弘
Author(eng)Sakata, Kaoruho; Mukai, Midori; Arivanandhan, Mukannan; Rajesh, Govindasamy; Ishikawa, Takehiko; Inatomi, Yuko; Hayakawa, Yasuhiro
Author Affiliation(jpn)宇宙航空研究開発機構宇宙科学研究所(JAXA)(ISAS); エー・イー・エス; 静岡大学; 静岡大学; 宇宙航空研究開発機構宇宙科学研究所(JAXA)(ISAS); 宇宙航空研究開発機構宇宙科学研究所(JAXA)(ISAS); 静岡大学
Author Affiliation(eng)Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency (JAXA)(ISAS); AES Co.,Ltd.; Research Institute of Electronics, Shizuoka University; Research Institute of Electronics, Shizuoka University; Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency (JAXA)(ISAS); Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency (JAXA)(ISAS); Research Institute of Electronics, Shizuoka University
Issue Date2014
Publisher日本航空宇宙学会
The Japan Society of Aeronautical and Space Sciences
Publication titleTransactions of the Japan Society for Aeronautical and Space Sciences, Aerospace Technology Japan
Volume12
Issueists29
Start pagePh_31
End pagePh_35
Publication date2014
Languageeng
KeywordsAlloy Semiconductor; Crystal Growth; InGaSb; Thermal Property
Document TypeJournal Article
JAXA Category学術雑誌論文
ISSN1884-0485
SHI-NOSA1004949000
URIhttps://repository.exst.jaxa.jp/dspace/handle/a-is/7180


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