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高温エレクトロニクスにおけるSiCの課題解決に向けて -MOSFETの低チャンネル移動度と閾値シフトの要因を解明する取り組み-
https://jaxa.repo.nii.ac.jp/records/17511
https://jaxa.repo.nii.ac.jp/records/175110285f511-d003-4a7b-bcb2-40a41419d000
Item type | 会議発表論文 / Conference Paper(1) | |||||
---|---|---|---|---|---|---|
公開日 | 2017-11-27 | |||||
タイトル | ||||||
タイトル | 高温エレクトロニクスにおけるSiCの課題解決に向けて -MOSFETの低チャンネル移動度と閾値シフトの要因を解明する取り組み- | |||||
言語 | ||||||
言語 | jpn | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_5794 | |||||
資源タイプ | conference paper | |||||
アクセス権 | ||||||
アクセス権 | metadata only access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
その他のタイトル(英) | ||||||
その他のタイトル | For Breakthrough to apply SiC Devices in High Temperature Electronics -Tackling Low Channel Mobility and Instability of Threshold Voltage of MOSFET- | |||||
著者 |
塩見, 弘
× 塩見, 弘× 北井, 秀憲× 辻村, 理俊× 木内, 祐治× 福田, 憲司× 坂本, 邦博× 奥村, 元× Shiomi, Hiroshi× Kitai, Hidenori× Sakamoto, Kunihiro× Okumura, Hajime |
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著者所属 | ||||||
産業技術総合研究所 | ||||||
著者所属 | ||||||
産業技術総合研究所 | ||||||
著者所属 | ||||||
産業技術総合研究所 | ||||||
著者所属 | ||||||
産業技術総合研究所 | ||||||
著者所属 | ||||||
産業技術総合研究所 | ||||||
著者所属 | ||||||
産業技術総合研究所 | ||||||
著者所属 | ||||||
産業技術総合研究所 | ||||||
著者所属(英) | ||||||
en | ||||||
National Institute of Advanced Industrial Science and Technology(AIST) | ||||||
著者所属(英) | ||||||
en | ||||||
National Institute of Advanced Industrial Science and Technology(AIST) | ||||||
著者所属(英) | ||||||
en | ||||||
National Institute of Advanced Industrial Science and Technology(AIST) | ||||||
著者所属(英) | ||||||
en | ||||||
National Institute of Advanced Industrial Science and Technology(AIST) | ||||||
著者所属(英) | ||||||
en | ||||||
National Institute of Advanced Industrial Science and Technology(AIST) | ||||||
著者所属(英) | ||||||
en | ||||||
National Institute of Advanced Industrial Science and Technology(AIST) | ||||||
著者所属(英) | ||||||
en | ||||||
National Institute of Advanced Industrial Science and Technology(AIST) | ||||||
出版者 | ||||||
出版者 | 宇宙航空研究開発機構宇宙科学研究所(JAXA)(ISAS) | |||||
出版者(英) | ||||||
出版者 | Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency(JAXA)(ISAS) | |||||
書誌情報 |
第25回高温エレクトロニクス研究会 en : Proceedings of the 25th ISAS Research Meeting on HIGH TEMPERATURE ELECTRONICS p. 18-23, 発行日 2015-07 |
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会議概要(会議名, 開催地, 会期, 主催者等) | ||||||
内容記述タイプ | Other | |||||
内容記述 | 第25回高温エレクトロニクス研究会(2015年3月17日. 宇宙航空研究開発機構宇宙科学研究所 (JAXA)(ISAS)), 相模原市, 神奈川県 | |||||
会議概要(会議名, 開催地, 会期, 主催者等)(英) | ||||||
内容記述タイプ | Other | |||||
内容記述 | 25th ISAS Research Meeting on HIGH TEMPERATURE ELECTRONICS (March 17, 2015. Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency (JAXA)(ISAS)), Sagamihara, Kanagawa Japan | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA11987120 | |||||
資料番号 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 資料番号: SA6000104003 |