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titleResistance-Based Modeling for Soft Errors in SOI SRAMs Caused by Radiation-Induced Potential Perturbation Under the BOX
DOIinfo:doi/10.1109/TDMR.2018.2873220
Author(jpn)Chung, Chin-Han; 小林, 大輔; 廣瀬, 和之
Author(eng)Chung, Chin-Han; Kobayashi, Daisuke; Hirose, Kazuyuki
Author Affiliation(jpn)東京大学 : 宇宙航空研究開発機構宇宙科学研究所(JAXA)(ISAS); 東京大学 : 宇宙航空研究開発機構宇宙科学研究所(JAXA)(ISAS); 東京大学 : 宇宙航空研究開発機構宇宙科学研究所(JAXA)(ISAS)
Author Affiliation(eng)Department of Electrical Engineering and Informative System, Graduate School of Engineering, University of Tokyo : Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency(JAXA)(ISAS); Department of Electrical Engineering and Informative System, Graduate School of Engineering, University of Tokyo : Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency(JAXA)(ISAS); Department of Electrical Engineering and Informative System, Graduate School of Engineering, University of Tokyo : Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency(JAXA)(ISAS)
Issue Date2018-12
PublisherInstitute of Electrical and Electronics Engineers, Inc.
Publication titleIEEE Transactions on Device and materials Reliability
Volume18
Issue4
Start page574
End page582
Publication date2018-12
Languageeng
DescriptionAccepted: 2018-09-24
KeywordsSoft error; radiation effect; silicon-on-insulator.
Document TypeJournal Article
JAXA Category学術雑誌論文
ISSN1530-4388
ISSN(online)1558-2574
NCIDAA11569084
SHI-NOSA1180171000
URIhttps://repository.exst.jaxa.jp/dspace/handle/a-is/906818


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