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titleProcess Variation Aware Analysis of SRAM SEU Cross Sections Using Data Retention Voltage
DOIinfo:doi/10.1109/TNS.2018.2882221
Author(jpn)小林, 大輔; Hayashi, Naoki; 廣瀬, 和之; 梯, 友哉; 川崎, 治; 牧野, 高紘; 大島, 武; 松浦, 大介; Mori, Yoshiharu; Kusano, Masaki; 成田, 貴則; 石井, 茂; 益川, 一範
Author(eng)Kobayashi, Daisuke; Hayashi, Naoki; Hirose, Kazuyuki; Kakehashi, Yuya; Kawasaki, Osamu; Makino, Takahiro; Ohshima, Takeshi; Matsuura, Daisuke; Mori, Yoshiharu; Kusano, Masaki; Narita, Takanori; Ishii, Shigeru; Masukawa, Kazunori
Author Affiliation(jpn)宇宙航空研究開発機構宇宙科学研究所(JAXA)(ISAS) : 東京大学; 東京大学; 宇宙航空研究開発機構宇宙科学研究所(JAXA)(ISAS) : 東京大学; 宇宙航空研究開発機構研究開発部門 (JAXA); 宇宙航空研究開発機構研究開発部門 (JAXA); 量子科学技術研究開発機構; 量子科学技術研究開発機構; 三菱重工業株式会社; 三菱重工業株式会社; 三菱重工業株式会社; 三菱重工業株式会社; 三菱重工業株式会社; 三菱重工業株式会社
Author Affiliation(eng)Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency(JAXA)(ISAS) : Graduate School of Engineering, The University of Tokyo; Graduate School of Engineering, The University of Tokyo; Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency(JAXA)(ISAS) : Graduate School of Engineering, The University of Tokyo; Research and Development Directorate, Japan Aerospace Exploration Agency (JAXA); Research and Development Directorate, Japan Aerospace Exploration Agency (JAXA); National Institutes for Quantum and Radiological Science and Technology; National Institutes for Quantum and Radiological Science and Technology; Mitsubishi Heavy Industries, Ltd.; Mitsubishi Heavy Industries, Ltd.; Mitsubishi Heavy Industries, Ltd.; Mitsubishi Heavy Industries, Ltd.; Mitsubishi Heavy Industries, Ltd.; Mitsubishi Heavy Industries, Ltd.
Issue Date2019-01
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Publication titleIEEE Transactions on Nuclear Science
Volume66
Issue1
Start page155
End page162
Publication date2019-01
Languageeng
Description著者人数: 13名
Accepted: 2018-11-13
KeywordsData retention voltage; error analysis; integrated circuit reliability; ion radiation effects; neutron radiation effects; quality management; radiation hardening; static noise margin; static random access memory (SRAM) cells; SRAM chips.
Document TypeJournal Article
JAXA Category学術雑誌論文
ISSN0018-9499
ISSN(online)1558-1578
NCIDAA00667999
SHI-NOSA1180337000
URIhttps://repository.exst.jaxa.jp/dspace/handle/a-is/915976


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