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1. Memory reliability of spintronic materials and devices for disaster-resilient computing against radiation-induced bit flips on the ground
(著者名) 廣瀬, 和之; 小林, 大輔; 伊藤, 大智; ほか
(Author) Hirose, Kazuyuki; Kobayashi, Daisuke; Ito, Taichi; et al.
(内容記述) Accepted: 2017-04-10
(文献種別) Journal Article (ISSN) 0021-4922
(Journal Name) Japanese Journal of Applied Physics(巻) 56(号) 8(ページ) 0802A5(刊行年月日) 2017-08
(言語) eng(資料番号) SA1170005000
2. Fast neutron tolerance of the perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with junction diameters between 46 and 64nm
(著者名) 成田, 克; 高橋, 豊; 原田, 正英; ほか
(Author) Narita, Yuzuru; Takahashi, Yutaka; Harada, Masahide; et al.
(内容記述) Accepted: 2017-04-09
(文献種別) Journal Article (ISSN) 0021-4922
(Journal Name) Japanese Journal of Applied Physics(巻) 56(号) 8(ページ) 0802B3(刊行年月日) 2017-08
(言語) eng(資料番号) SA1170007000
3. Soft errors in 10-nm-scale magnetic tunnel junctions exposed to high-energy heavy-ion radiation
(著者名) 小林, 大輔; 廣瀬, 和之; 牧野, 高紘; ほか
(Author) Kobayashi, Daisuke; Hirose, Kazuyuki; Makino, Takahiro; et al.
(内容記述) Accepted: 2017-04-27
(文献種別) Journal Article (ISSN) 0021-4922
(Journal Name) Japanese Journal of Applied Physics(巻) 56(号) 8(ページ) 0802B4(刊行年月日) 2017-08
(言語) eng(資料番号) SA1170006000
4. Time-domain study on reproducibility of laser-based soft-error simulation
(著者名) 井辻, 宏章; 小林, 大輔; Lourenco, Nelson E.; ほか
(Author) Itsuji, Hiroaki; Kobayashi, Daisuke; Lourenco, Nelson E.; et al.
(内容記述) Accepted: 2017-01-07
(文献種別) Journal Article (ISSN) 0021-4922
(Journal Name) Japanese Journal of Applied Physics(巻) 56(号) 4S(ページ) 04CD16(刊行年月日) 2017-03
(言語) eng(資料番号) SA1160357000
5. Degradation of CH3NH3PbI3 perovskite due to soft x-ray irradiation as analyzed by an x-ray photoelectron spectroscopy time-dependent measurement method
(著者名) 元木, 啓介; 宮澤, 優; 小林, 大輔; ほか
(Author) Motoki, Keisuke; Miyazawa, Yu; Kobayashi, Daisuke; et al.
(内容記述) Accepted: 2017-02-12
(文献種別) Journal Article (ISSN) 0021-8979
(Journal Name) Journal of Applied Physics(巻) 121(号) 8(ページ) 085501(刊行年月日) 2017-02
(言語) eng(資料番号) SA1160364000
6. The Impact of Technology Scaling on the Single-Event Transient Response of SiGe HBTs
(著者名) Lourenco, Nelson E.; Fleetwood, Zachary E.; Ildefonso, Adrian; ほか
(Author) Lourenco, Nelson E.; Fleetwood, Zachary E.; Ildefonso, Adrian; et al.
(内容記述) 著者人数: 15名
(文献種別) Journal Article (ISSN) 0018-9499
(Journal Name) IEEE Transactions on Nuclear Science(巻) 64(号) 1(ページ) 406-414(刊行年月日) 2017-01
(言語) eng(資料番号) SA1160320000
7. 宇宙で活躍する半導体デバイス
(著者名) 廣瀬, 和之; 小林, 大輔
(Author) Hirose, Kazuyuki; Kobayashi, Daisuke
(文献種別) Journal Article (ISSN) 0369-8009
(刊行物名) 応用物理(Journal Name) OYO BUTURI(巻) 83(号) 8(ページ) 655-659(刊行年月日) 2014-08
(言語) jpn(資料番号) SA1005085000
8. Influence of Heavy Ion Irradiation on Perpendicular-Anisotropy CoFeB-MgO Magnetic Tunnel Junctions
(著者名) 小林, 大輔; 梯, 友哉; 廣瀬, 和之; ほか
(Author) Kobayashi, Daisuke; Kakehashi, Yuya; Hirose, Kazuyuki; et al.
(内容記述) 著者人数: 12名
(文献種別) Journal Article (ISSN) 0018-9499
(Journal Name) IEEE Transactions on Nuclear Science(巻) 61(号) 4(ページ) 1710-1716(刊行年月日) 2014-08
(言語) eng(資料番号) SA1004874000
9. Estimation of Breakdown Electric-Field Strength While Reflecting Local Structures of SiO2 Gate Dielectrics Using First-Principles Molecular Orbital Calculation Technique
(著者名) 関, 洋; 渋谷, 寧浩; 小林, 大輔; ほか
(Author) Seki, Hiroshi; Shibuya, Yasuhiro; Kobayashi, Daisuke; et al.
(内容記述) Accepted: 2011-12-02
(文献種別) Journal Article (ISSN) 0021-4922
(Journal Name) Japanese Journal of Applied Physics(巻) 51(号) 4(ページ) 04DA07(刊行年月日) 2012-04
(言語) eng(資料番号) SA1003639000
10. Influence of 60-MeV Proton-Irradiation on Standard and Strained n- and p-Channel MuGFETs
(著者名) Agopian, Paula G. D.; Martino, Joao A.; 小林, 大輔; ほか
(Author) Agopian, Paula G. D.; Martino, Joao A.; Kobayashi, Daisuke; et al.
(内容記述) Accepted: 2012-01-31
(文献種別) Journal Article (ISSN) 0018-9499
(Journal Name) IEEE Transactions on Nuclear Science(巻) 59(号) 4(ページ) 707-713(刊行年月日) 2012
(言語) eng(資料番号) SA1003619000
11. Impact of the Ge content and recess depth on the leakage current in strained Si1-xGex/Si heterojunctions
(著者名) Rodriguez, Abraham Luque; Gonzalez, Mireia Bargallo; Eneman, Geert; ほか
(Author) Rodriguez, Abraham Luque; Gonzalez, Mireia Bargallo; Eneman, Geert; et al.
(内容記述) Accepted: 2011-04-19
(文献種別) Journal Article (ISSN) 0018-9383
(Journal Name) IEEE Transactions on Electron Devices(巻) 58(号) 8(ページ) 2362-2370(刊行年月日) 2011-08
(言語) eng(資料番号) SA1003244000
12. Proton-induced mobility degradation in FinFETs with stressor layers and strained SOI substrates
(著者名) 小林, 大輔; Simoen, Eddy; Put, Sofie; ほか
(Author) Kobayashi, Daisuke; Simoen, Eddy; Put, Sofie; et al.
(内容記述) Accepted: 2011-01-24
(文献種別) Journal Article (ISSN) 0018-9499
(Journal Name) IEEE Transactions on Nuclear Science(巻) 58(号) 3(ページ) 800-807(刊行年月日) 2011-06
(言語) eng(資料番号) SA1002700000
13. Development of SOI pixel process technology
(著者名) 新井, 康夫; 三好, 敏喜; 海野, 義信; ほか
(Author) Arai, Y.; Miyoshi, T.; Unno, Y.; et al.
(内容記述) 著者人数: 50名
(文献種別) Journal Article (ISSN) 0168-9002
(Journal Name) Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment(巻) 636(号) 1 Supplement 1(ページ) S31-S36(刊行年月日) 2011-04-21
(言語) eng(資料番号) SA1002760000
14. High Doping Density/High Electric Field, Stress and Heterojunction Effects on the Characteristics of CMOS Compatible p-n Junctions
(著者名) Simoen, E.; Eneman, G.; Bargallo Gonzalez, M.; ほか
(Author) Simoen, E.; Eneman, G.; Bargallo Gonzalez, M.; et al.
(文献種別) Journal Article (ISSN) 0013-4651
(Journal Name) Journal of the Electrochemical Society(巻) 158(号) 5(ページ) R27-R36(刊行年月日) 2011-03-25
(言語) eng(資料番号) SA1002742000
15. 宇宙・民生デュアルユースの半導体集積回路の開発 -SOIデバイスの放射線耐性強化技術-
(著者名) 廣瀬. 和之; 齋藤, 宏文; 小林, 大輔; ほか
(Author) Hirose, Kazuyuki; Saito, Hirobumi; Kobayashi, Daisuke; et al.
(文献種別) Journal Article (ISSN) 0021-4663
(刊行物名) 日本航空宇宙学会誌(Journal Name) Journal of the Japan Society for Aeronautical and Space Sciences(巻) 59(号) 684(ページ) 8-14(刊行年月日) 2011-01-05
(言語) jpn(資料番号) SA1002830000
16. Large SET duration broadening in a fully-depleted SOI technology-mitigation with body contacts
(著者名) 小林, 大輔; 池田, 博一; 廣瀬, 和之
(Author) Ferlet-Cavrois, V.; Kobayashi, Daisuke; McMorrow, D.; et al.
(文献種別) Journal Article (ISSN) 0018-9499
(Journal Name) IEEE Transactions on Nuclear Science(巻) 57(号) 4(ページ) 1811-1819(刊行年月日) 2010-08
(言語) eng(資料番号) SA1002020000
17. Device-physics-based analytical model for single-event transients in SOI CMOS logic
(著者名) 小林, 大輔; 廣瀬, 和之; 牧野, 高紘; ほか
(Author) Kobayashi, Daisuke; Hirose, Kazuyuki; Ferlet-Cavrois, V.; et al.
(文献種別) Journal Article (ISSN) 0018-9499
(Journal Name) IEEE Transactions on Nuclear Science(巻) 56(号) 6(ページ) 3043-3049(刊行年月日) 2009-12
(言語) eng(資料番号) SA1000804000
18. Soft-error rate in a logic LSI estimated from SET pulse-width measurements
(著者名) 牧野, 高紘; 小林, 大輔; 廣瀬, 和之; ほか
(Author) Makino, T.; Kobayashi, Daisuke; Hirose, Kazuyuki; et al.
(文献種別) Journal Article (ISSN) 0018-9499
(Journal Name) IEEE Transactions on Nuclear Science(巻) 56(号) 6(ページ) 3180-3184(刊行年月日) 2009-12
(言語) eng(資料番号) SA1000803000
19. Experimental verification of scan-architecture-based evaluation technique of SET and SEU soft-error rates at each flip-flop in logic VLSI systems
(著者名) 柳川, 善光; 小林, 大輔; 廣瀬, 和之; ほか
(Author) Yanagawa, Y.; Kobayashi, Daisuke; Hirose, Kazuyuki; et al.
(文献種別) Journal Article (ISSN) 0018-9499
(Journal Name) IEEE Transactions on Nuclear Science(巻) 56(号) 4(ページ) 1958-1963(刊行年月日) 2009-08
(言語) eng(資料番号) SA1000801000
20. A new technique for SET pulse width measurement in chains of inverters using pulsed laser irradiation
(著者名) 小林, 大輔; 廣瀬, 和之; 齋藤, 宏文
(Author) Ferlet-Cavrois, V.; McMorrow, D.; Kobayashi, Daisuke; et al.
(内容記述) 著者人数:18名
(文献種別) Journal Article (ISSN) 0018-9499
(Journal Name) IEEE Transactions on Nuclear Science(巻) 56(号) 4(ページ) 2014-2020(刊行年月日) 2009-08
(言語) eng(資料番号) SA1000802000
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