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1. Process Variation Aware Analysis of SRAM SEU Cross Sections Using Data Retention Voltage
(著者名) 小林, 大輔; Hayashi, Naoki; 廣瀬, 和之; ほか
(Author) Kobayashi, Daisuke; Hayashi, Naoki; Hirose, Kazuyuki; et al.
(内容記述) 著者人数: 13名
(文献種別) Journal Article (ISSN) 0018-9499
(Journal Name) IEEE Transactions on Nuclear Science(巻) 66(号) 1(ページ) 155-162(刊行年月日) 2019-01
(言語) eng(資料番号) SA1180337000
2. Resistance-Based Modeling for Soft Errors in SOI SRAMs Caused by Radiation-Induced Potential Perturbation Under the BOX
(著者名) Chung, Chin-Han; 小林, 大輔; 廣瀬, 和之
(Author) Chung, Chin-Han; Kobayashi, Daisuke; Hirose, Kazuyuki
(内容記述) Accepted: 2018-09-24
(文献種別) Journal Article (ISSN) 1530-4388
(Journal Name) IEEE Transactions on Device and materials Reliability(巻) 18(号) 4(ページ) 574-582(刊行年月日) 2018-12
(言語) eng(資料番号) SA1180171000
3. Characterization of stability of benchmark organic photovoltaic films after proton and electron bombardments
(著者名) Barbe, Jeremy; Lee, Harrison K. H.; 豊田, 裕之; ほか
(Author) Barbe, Jeremy; Lee, Harrison K. H.; Toyota, Hiroyuki; et al.
(内容記述) Accepted: 2018-10-15
(文献種別) Journal Article (ISSN) 0003-6951
(Journal Name) Applied Physics Letters(巻) 113(号) 18(ページ) 183301(刊行年月日) 2018-10-29
(言語) eng(資料番号) SA1180113000
4. The Impact of Multiple-Cell Charge Generation on Multiple-Cell Upset in a 20-nm Bulk SRAM
(著者名) 加藤, 貴志; Yamazaki, Takashi; Maruyama, Kazunori; ほか
(Author) Kato, Takashi; Yamazaki, Takashi; Maruyama, Kazunori; et al.
(内容記述) Accepted: 2018-03-26
(文献種別) Journal Article (ISSN) 0018-9499
(Journal Name) IEEE Transactions on Nuclear Science(巻) 65(号) 8(ページ) 1900-1907(刊行年月日) 2018-08
(言語) eng(資料番号) SA1180070000
5. Tolerance of Perovskite Solar Cell to High-Energy Particle Irradiations in Space Environment
(著者名) 宮澤, 優; 池上, 和志; Chen, Hsin-Wei; ほか
(Author) Miyazawa, Yu; Ikegami, Masashi; Chen, Hsin-Wei; et al.
(内容記述) Physical characteristics: Original contains color illustrations
(文献種別) Journal Article
(Journal Name) iScience(巻) 2(ページ) 148-155(刊行年月日) 2018-04-27
(言語) eng(資料番号) PA1810039000
6. Theoretical investigation of the breakdown electric field of SiC polymorphs
(著者名) 山口, 記功; 小林, 大輔; 山本, 知之; ほか
(Author) Yamaguchi, Kikou; Kobayashi, Daisuke; Yamamoto, Tomoyuki; et al.
(内容記述) Accepted: 2017-03-27
(文献種別) Journal Article (ISSN) 0921-4526
(Journal Name) Physica B: Condensed Matter(巻) 532(ページ) 99-102(刊行年月日) 2018-03-01
(言語) eng(資料番号) SA1170259000
7. Laser Visualization of the Development of Long Line-Type Mutli-Cell Upsets in Back-Biased SOI SRAMs
(著者名) 井辻, 宏章; 小林, 大輔; 川崎, 治; ほか
(Author) Itsuji, Hiroaki; Kobayashi, Daisuke; Kawasaki, Osamu; et al.
(内容記述) Accepted: 2017-11-14
(文献種別) Journal Article (ISSN) 0018-9499
(Journal Name) IEEE Transactions on Nuclear Science(巻) 65(号) 1(ページ) 346-353(刊行年月日) 2018-01
(言語) eng(資料番号) SA1170249000
8. Heavy-Ion Soft Errors in Back-Biased Thin-BOX SOI SRAMs: Hundredfold Sensitivity Due to Line-Type Multicell Upsets
(著者名) 小林, 大輔; 廣瀬, 和之; 伊藤, 大智; ほか
(Author) Kobayashi, Daisuke; Hirose, Kazuyuki; Ito, Taichi; et al.
(内容記述) 著者人数: 12名
(文献種別) Journal Article (ISSN) 0018-9499
(Journal Name) IEEE Transactions on Nuclear Science(巻) 65(号) 1(ページ) 523-532(刊行年月日) 2018-01
(言語) eng(資料番号) SA1170193000
9. Memory reliability of spintronic materials and devices for disaster-resilient computing against radiation-induced bit flips on the ground
(著者名) 廣瀬, 和之; 小林, 大輔; 伊藤, 大智; ほか
(Author) Hirose, Kazuyuki; Kobayashi, Daisuke; Ito, Taichi; et al.
(内容記述) Accepted: 2017-04-10
(文献種別) Journal Article (ISSN) 0021-4922
(Journal Name) Japanese Journal of Applied Physics(巻) 56(号) 8(ページ) 0802A5(刊行年月日) 2017-08
(言語) eng(資料番号) SA1170005000
10. Fast neutron tolerance of the perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with junction diameters between 46 and 64nm
(著者名) 成田, 克; 高橋, 豊; 原田, 正英; ほか
(Author) Narita, Yuzuru; Takahashi, Yutaka; Harada, Masahide; et al.
(内容記述) Accepted: 2017-04-09
(文献種別) Journal Article (ISSN) 0021-4922
(Journal Name) Japanese Journal of Applied Physics(巻) 56(号) 8(ページ) 0802B3(刊行年月日) 2017-08
(言語) eng(資料番号) SA1170007000
11. Soft errors in 10-nm-scale magnetic tunnel junctions exposed to high-energy heavy-ion radiation
(著者名) 小林, 大輔; 廣瀬, 和之; 牧野, 高紘; ほか
(Author) Kobayashi, Daisuke; Hirose, Kazuyuki; Makino, Takahiro; et al.
(内容記述) Accepted: 2017-04-27
(文献種別) Journal Article (ISSN) 0021-4922
(Journal Name) Japanese Journal of Applied Physics(巻) 56(号) 8(ページ) 0802B4(刊行年月日) 2017-08
(言語) eng(資料番号) SA1170006000
12. Time-domain study on reproducibility of laser-based soft-error simulation
(著者名) 井辻, 宏章; 小林, 大輔; Lourenco, Nelson E.; ほか
(Author) Itsuji, Hiroaki; Kobayashi, Daisuke; Lourenco, Nelson E.; et al.
(内容記述) Accepted: 2017-01-07
(文献種別) Journal Article (ISSN) 0021-4922
(Journal Name) Japanese Journal of Applied Physics(巻) 56(号) 4S(ページ) 04CD16(刊行年月日) 2017-03
(言語) eng(資料番号) SA1160357000
13. Degradation of CH3NH3PbI3 perovskite due to soft x-ray irradiation as analyzed by an x-ray photoelectron spectroscopy time-dependent measurement method
(著者名) 元木, 啓介; 宮澤, 優; 小林, 大輔; ほか
(Author) Motoki, Keisuke; Miyazawa, Yu; Kobayashi, Daisuke; et al.
(内容記述) Accepted: 2017-02-12
(文献種別) Journal Article (ISSN) 0021-8979
(Journal Name) Journal of Applied Physics(巻) 121(号) 8(ページ) 085501(刊行年月日) 2017-02
(言語) eng(資料番号) SA1160364000
14. The Impact of Technology Scaling on the Single-Event Transient Response of SiGe HBTs
(著者名) Lourenco, Nelson E.; Fleetwood, Zachary E.; Ildefonso, Adrian; ほか
(Author) Lourenco, Nelson E.; Fleetwood, Zachary E.; Ildefonso, Adrian; et al.
(内容記述) 著者人数: 15名
(文献種別) Journal Article (ISSN) 0018-9499
(Journal Name) IEEE Transactions on Nuclear Science(巻) 64(号) 1(ページ) 406-414(刊行年月日) 2017-01
(言語) eng(資料番号) SA1160320000
15. 宇宙で活躍する半導体デバイス
(著者名) 廣瀬, 和之; 小林, 大輔
(Author) Hirose, Kazuyuki; Kobayashi, Daisuke
(文献種別) Journal Article (ISSN) 0369-8009
(刊行物名) 応用物理(Journal Name) OYO BUTURI(巻) 83(号) 8(ページ) 655-659(刊行年月日) 2014-08
(言語) jpn(資料番号) SA1005085000
16. Influence of Heavy Ion Irradiation on Perpendicular-Anisotropy CoFeB-MgO Magnetic Tunnel Junctions
(著者名) 小林, 大輔; 梯, 友哉; 廣瀬, 和之; ほか
(Author) Kobayashi, Daisuke; Kakehashi, Yuya; Hirose, Kazuyuki; et al.
(内容記述) 著者人数: 12名
(文献種別) Journal Article (ISSN) 0018-9499
(Journal Name) IEEE Transactions on Nuclear Science(巻) 61(号) 4(ページ) 1710-1716(刊行年月日) 2014-08
(言語) eng(資料番号) SA1004874000
17. Determination of valence state of Mn ions in Pr(1-x)A(x)MnO(3-delta) (A = Ca, Sr) by Mn-L3 X-ray Absorption Near-Edge Structure Analysis
(著者名) 金盛, 治人; 吉岡, 剛志; 廣瀬, 和之; ほか
(Author) Kanamori, Haruto; Yoshioka, Tsuyoshi; Hirose, Kazuyuki; et al.
(内容記述) Accepted: 2012-03-28
(文献種別) Journal Article (ISSN) 0368-2048
(Journal Name) Journal of Electron Spectroscopy and Related Phenomena(巻) 185(号) 5-7(ページ) 129-132(刊行年月日) 2012-08
(言語) eng(資料番号) SA1004250000
18. Molecular-Beam Epitaxial Growth of a Far-Infrared Transparent Electrode for Extrinsic Germanium Photoconductors
(著者名) 鈴木, 仁研; 和田, 武彦; 廣瀬, 和之; ほか
(Author) Suzuki, Toyoaki; Wada, Takehiko; Hirose, Kazuyuki; et al.
(内容記述) Accepted: 2012-06-12
(文献種別) Journal Article (ISSN) 0004-6280
(Journal Name) Publications of the Astronomical Society of the Pacific(巻) 124(号) 918(ページ) 823-829(刊行年月日) 2012-08
(言語) eng(資料番号) SA1004340000
19. Estimation of Breakdown Electric-Field Strength While Reflecting Local Structures of SiO2 Gate Dielectrics Using First-Principles Molecular Orbital Calculation Technique
(著者名) 関, 洋; 渋谷, 寧浩; 小林, 大輔; ほか
(Author) Seki, Hiroshi; Shibuya, Yasuhiro; Kobayashi, Daisuke; et al.
(内容記述) Accepted: 2011-12-02
(文献種別) Journal Article (ISSN) 0021-4922
(Journal Name) Japanese Journal of Applied Physics(巻) 51(号) 4(ページ) 04DA07(刊行年月日) 2012-04
(言語) eng(資料番号) SA1003639000
20. Proton-induced mobility degradation in FinFETs with stressor layers and strained SOI substrates
(著者名) 小林, 大輔; Simoen, Eddy; Put, Sofie; ほか
(Author) Kobayashi, Daisuke; Simoen, Eddy; Put, Sofie; et al.
(内容記述) Accepted: 2011-01-24
(文献種別) Journal Article (ISSN) 0018-9499
(Journal Name) IEEE Transactions on Nuclear Science(巻) 58(号) 3(ページ) 800-807(刊行年月日) 2011-06
(言語) eng(資料番号) SA1002700000
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