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1. Memory reliability of spintronic materials and devices for disaster-resilient computing against radiation-induced bit flips on the ground
(著者名) 廣瀬, 和之; 小林, 大輔; 伊藤, 大智; ほか
(Author) Hirose, Kazuyuki; Kobayashi, Daisuke; Ito, Taichi; et al.
(内容記述) Accepted: 2017-04-10
(文献種別) Journal Article (ISSN) 0021-4922
(Journal Name) Japanese Journal of Applied Physics(巻) 56(号) 8(ページ) 0802A5(刊行年月日) 2017-08
(言語) eng(資料番号) SA1170005000
2. Fast neutron tolerance of the perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with junction diameters between 46 and 64nm
(著者名) 成田, 克; 高橋, 豊; 原田, 正英; ほか
(Author) Narita, Yuzuru; Takahashi, Yutaka; Harada, Masahide; et al.
(内容記述) Accepted: 2017-04-09
(文献種別) Journal Article (ISSN) 0021-4922
(Journal Name) Japanese Journal of Applied Physics(巻) 56(号) 8(ページ) 0802B3(刊行年月日) 2017-08
(言語) eng(資料番号) SA1170007000
3. Soft errors in 10-nm-scale magnetic tunnel junctions exposed to high-energy heavy-ion radiation
(著者名) 小林, 大輔; 廣瀬, 和之; 牧野, 高紘; ほか
(Author) Kobayashi, Daisuke; Hirose, Kazuyuki; Makino, Takahiro; et al.
(内容記述) Accepted: 2017-04-27
(文献種別) Journal Article (ISSN) 0021-4922
(Journal Name) Japanese Journal of Applied Physics(巻) 56(号) 8(ページ) 0802B4(刊行年月日) 2017-08
(言語) eng(資料番号) SA1170006000
4. Time-domain study on reproducibility of laser-based soft-error simulation
(著者名) 井辻, 宏章; 小林, 大輔; Lourenco, Nelson E.; ほか
(Author) Itsuji, Hiroaki; Kobayashi, Daisuke; Lourenco, Nelson E.; et al.
(内容記述) Accepted: 2017-01-07
(文献種別) Journal Article (ISSN) 0021-4922
(Journal Name) Japanese Journal of Applied Physics(巻) 56(号) 4S(ページ) 04CD16(刊行年月日) 2017-03
(言語) eng(資料番号) SA1160357000
5. Degradation of CH3NH3PbI3 perovskite due to soft x-ray irradiation as analyzed by an x-ray photoelectron spectroscopy time-dependent measurement method
(著者名) 元木, 啓介; 宮澤, 優; 小林, 大輔; ほか
(Author) Motoki, Keisuke; Miyazawa, Yu; Kobayashi, Daisuke; et al.
(内容記述) Accepted: 2017-02-12
(文献種別) Journal Article (ISSN) 0021-8979
(Journal Name) Journal of Applied Physics(巻) 121(号) 8(ページ) 085501(刊行年月日) 2017-02
(言語) eng(資料番号) SA1160364000
6. The Impact of Technology Scaling on the Single-Event Transient Response of SiGe HBTs
(著者名) Lourenco, Nelson E.; Fleetwood, Zachary E.; Ildefonso, Adrian; ほか
(Author) Lourenco, Nelson E.; Fleetwood, Zachary E.; Ildefonso, Adrian; et al.
(内容記述) 著者人数: 15名
(文献種別) Journal Article (ISSN) 0018-9499
(Journal Name) IEEE Transactions on Nuclear Science(巻) 64(号) 1(ページ) 406-414(刊行年月日) 2017-01
(言語) eng(資料番号) SA1160320000
7. 宇宙で活躍する半導体デバイス
(著者名) 廣瀬, 和之; 小林, 大輔
(Author) Hirose, Kazuyuki; Kobayashi, Daisuke
(文献種別) Journal Article (ISSN) 0369-8009
(刊行物名) 応用物理(Journal Name) OYO BUTURI(巻) 83(号) 8(ページ) 655-659(刊行年月日) 2014-08
(言語) jpn(資料番号) SA1005085000
8. Influence of Heavy Ion Irradiation on Perpendicular-Anisotropy CoFeB-MgO Magnetic Tunnel Junctions
(著者名) 小林, 大輔; 梯, 友哉; 廣瀬, 和之; ほか
(Author) Kobayashi, Daisuke; Kakehashi, Yuya; Hirose, Kazuyuki; et al.
(内容記述) 著者人数: 12名
(文献種別) Journal Article (ISSN) 0018-9499
(Journal Name) IEEE Transactions on Nuclear Science(巻) 61(号) 4(ページ) 1710-1716(刊行年月日) 2014-08
(言語) eng(資料番号) SA1004874000
9. Determination of valence state of Mn ions in Pr(1-x)A(x)MnO(3-delta) (A = Ca, Sr) by Mn-L3 X-ray Absorption Near-Edge Structure Analysis
(著者名) 金盛, 治人; 吉岡, 剛志; 廣瀬, 和之; ほか
(Author) Kanamori, Haruto; Yoshioka, Tsuyoshi; Hirose, Kazuyuki; et al.
(内容記述) Accepted: 2012-03-28
(文献種別) Journal Article (ISSN) 0368-2048
(Journal Name) Journal of Electron Spectroscopy and Related Phenomena(巻) 185(号) 5-7(ページ) 129-132(刊行年月日) 2012-08
(言語) eng(資料番号) SA1004250000
10. Molecular-Beam Epitaxial Growth of a Far-Infrared Transparent Electrode for Extrinsic Germanium Photoconductors
(著者名) 鈴木, 仁研; 和田, 武彦; 廣瀬, 和之; ほか
(Author) Suzuki, Toyoaki; Wada, Takehiko; Hirose, Kazuyuki; et al.
(内容記述) Accepted: 2012-06-12
(文献種別) Journal Article (ISSN) 0004-6280
(Journal Name) Publications of the Astronomical Society of the Pacific(巻) 124(号) 918(ページ) 823-829(刊行年月日) 2012-08
(言語) eng(資料番号) SA1004340000
11. Estimation of Breakdown Electric-Field Strength While Reflecting Local Structures of SiO2 Gate Dielectrics Using First-Principles Molecular Orbital Calculation Technique
(著者名) 関, 洋; 渋谷, 寧浩; 小林, 大輔; ほか
(Author) Seki, Hiroshi; Shibuya, Yasuhiro; Kobayashi, Daisuke; et al.
(内容記述) Accepted: 2011-12-02
(文献種別) Journal Article (ISSN) 0021-4922
(Journal Name) Japanese Journal of Applied Physics(巻) 51(号) 4(ページ) 04DA07(刊行年月日) 2012-04
(言語) eng(資料番号) SA1003639000
12. Proton-induced mobility degradation in FinFETs with stressor layers and strained SOI substrates
(著者名) 小林, 大輔; Simoen, Eddy; Put, Sofie; ほか
(Author) Kobayashi, Daisuke; Simoen, Eddy; Put, Sofie; et al.
(内容記述) Accepted: 2011-01-24
(文献種別) Journal Article (ISSN) 0018-9499
(Journal Name) IEEE Transactions on Nuclear Science(巻) 58(号) 3(ページ) 800-807(刊行年月日) 2011-06
(言語) eng(資料番号) SA1002700000
13. 宇宙・民生デュアルユースプロセッサの開発 -SOI-SoCの開発- Development of Processor for Both Space and Commercial Use : Development of SOI-SoC
(著者名) 黒田, 能克; 石井, 茂; 高橋, 大輔; ほか
(Author) Kuroda, Yoshikatsu; Ishii, Shigeru; Takahashi, Daisuke; et al.
(文献種別) Journal Article (ISSN) 0021-4663
(刊行物名) 日本航空宇宙学会誌(Journal Name) Journal of the Japan Society for Aeronautical and Space Sciences(巻) 59(号) 688(ページ) 149-154(刊行年月日) 2011-05-05
(言語) jpn(資料番号) SA1003218000
14. In diffusion and electronic energy structure in polymer layers on In tin oxide
(著者名) Skraba, Polona; Bratina, Gvido; 五十嵐, 智; ほか
(Author) Skraba, Polona; Bratina, Gvido; Igarashi, Satoru; et al.
(内容記述) Accepted: 2011-02-09
(文献種別) Journal Article (ISSN) 0040-6090
(Journal Name) Thin Solid Films(巻) 519(号) 13(ページ) 4216-4219(刊行年月日) 2011-04-29
(言語) eng(資料番号) SA1002810000
15. 宇宙・民生デュアルユースの半導体集積回路の開発 -SOIデバイスの放射線耐性強化技術-
(著者名) 廣瀬. 和之; 齋藤, 宏文; 小林, 大輔; ほか
(Author) Hirose, Kazuyuki; Saito, Hirobumi; Kobayashi, Daisuke; et al.
(文献種別) Journal Article (ISSN) 0021-4663
(刊行物名) 日本航空宇宙学会誌(Journal Name) Journal of the Japan Society for Aeronautical and Space Sciences(巻) 59(号) 684(ページ) 8-14(刊行年月日) 2011-01-05
(言語) jpn(資料番号) SA1002830000
16. 宇宙・民生デュアルユースの半導体集積回路の開発 -その戦略-
(著者名) 齋藤, 宏文; 廣瀬, 和之
(Author) Saito, Hirobumi; Hirose, Kazuyuki
(文献種別) Journal Article (ISSN) 1344-6460
(刊行物名) 日本航空宇宙学会誌(Journal Name) Journal of the Japan Society for Aeronautical and Space Sciences(巻) 58(号) 683(ページ) 365-372(刊行年月日) 2010-12-05
(言語) jpn(資料番号) SA1002829000
17. Analysis of local environment of Fe ions in hexagonal BaTiO3
(著者名) 近田, 旬佑; 廣瀬, 和之; 山本, 知之
(Author) Chikada, Shunsuke; Hirose, Kazuyuki; Yamamoto, Tomoyuki
(内容記述) Accepted: 2010-06-24
(文献種別) Journal Article (ISSN) 0021-4922
(Journal Name) Japanese Journal of Applied Physics(巻) 49(ページ) 91502(刊行年月日) 2010-09
(言語) eng(資料番号) SA1002025000
18. Large SET duration broadening in a fully-depleted SOI technology-mitigation with body contacts
(著者名) 小林, 大輔; 池田, 博一; 廣瀬, 和之
(Author) Ferlet-Cavrois, V.; Kobayashi, Daisuke; McMorrow, D.; et al.
(文献種別) Journal Article (ISSN) 0018-9499
(Journal Name) IEEE Transactions on Nuclear Science(巻) 57(号) 4(ページ) 1811-1819(刊行年月日) 2010-08
(言語) eng(資料番号) SA1002020000
19. XPS time-dependent measurement of SiO2/Si and HfAlOx/Si interfaces
(著者名) 廣瀬, 和之
(Author) Hirose, Kazuyuki
(文献種別) Journal Article (ISSN) 0368-2048
(Journal Name) Journal of Electron Spectroscopy and Related Phenomena(巻) 176(号) 1-3(ページ) 46-51(刊行年月日) 2010-01
(言語) eng(資料番号) SA1000817000
20. Schottky barrier heights, carrier density, and negative electron affinity of hydrogen-terminated diamond
(著者名) 津川, 和夫; 野田, 英行; 廣瀬, 和之; ほか
(Author) Tsugawa, K.; Noda, H.; Hirose, Kazuyuki; et al.
(文献種別) Journal Article (ISSN) 1098-0121
(Journal Name) Physical Review B(巻) 81(号) 4(ページ) 045303(刊行年月日) 2010-01
(言語) eng(資料番号) SA1000892000
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