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AA0048451000

Results 1-4 of 4.

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1. Estimation of diffusion coefficient by using numerical simulation of the Traveling Liquidus-Zone method Traveling Liquidus-Zone法の数値シミュレーションを利用した拡散係数の推定
(著者名) 足立 聡; 緒方 康行; 松本 聡; ほか
(Author) Adachi, Satoshi; Ogata, Yasuyuki; Matsumoto, Satoshi; et al.
(内容記述) JAXA Research and Development Report
(文献種別) Technical Report (レポート番号) JAXA-RR-04-022E (ISSN) 1349-1113
(刊行物名) Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs): Growth of Homogeneous Crystals(Journal Name) Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs): Growth of Homogeneous Crystals(ページ) 28-32(刊行年月日) 2005-03-31
(抄録) In order to estimate a diffusion coefficient, an InAs mole fraction profile, which is obtained by nu...
(言語) eng(資料番号) AA0048451004
2. Numerical investigation on two-dimensionality in the Traveling Liquidus-Zone method Traveling Liquidus-Zone法における2次元性に関する数値研究
(著者名) 足立 聡; 緒方 康行; 松本 聡; ほか
(Author) Adachi, Satoshi; Ogata, Yasuyuki; Matsumoto, Satoshi; et al.
(内容記述) JAXA Research and Development Report
(文献種別) Technical Report (レポート番号) JAXA-RR-04-022E (ISSN) 1349-1113
(刊行物名) Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs): Growth of Homogeneous Crystals(Journal Name) Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs): Growth of Homogeneous Crystals(ページ) 21-27(刊行年月日) 2005-03-31
(抄録) In order to investigate the two-dimensionality in the traveling liquidus-zone (TLZ) method, the two-...
(言語) eng(資料番号) AA0048451003
3. In(0.3)Ga(0.7)As plate crystals grown by the Traveling Liquidus-Zone (TLZ) method Traveling Liquidus-Zone法による板状のIn(0.3)Ga(0.7)As結晶成長
(著者名) 木下 恭一; 緒方 康行; 足立 聡; ほか
(Author) Kinoshita, Kyoichi; Ogata, Yasuyuki; Adachi, Satoshi; et al.
(内容記述) JAXA Research and Development Report
(文献種別) Technical Report (レポート番号) JAXA-RR-04-022E (ISSN) 1349-1113
(刊行物名) Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs): Growth of Homogeneous Crystals(Journal Name) Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs): Growth of Homogeneous Crystals(ページ) 14-20(刊行年月日) 2005-03-31
(抄録) The TLZ method is a new crystal growth method which has been invented for the growth of homogeneous ...
(言語) eng(資料番号) AA0048451002
4. Detailed results of this period: Growth of homogeneous Si(0.5)Ge(0.5) single crystals by the Traveling Liquidus-Zone Method 今期の詳細な結果:Traveling Liquidus-Zone法による均一なSi(0.5)Ge(0.5)単結晶の成長
(著者名) 宮田 浩旭; 緒方 康行; 木下 恭一; ほか
(Author) Miyata, Hiroaki; Ogata, Yasuyuki; Kinoshita, Kyoichi; et al.
(内容記述) JAXA Research and Development Report
(文献種別) Technical Report (レポート番号) JAXA-RR-04-022E (ISSN) 1349-1113
(刊行物名) Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs): Growth of Homogeneous Crystals(Journal Name) Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs): Growth of Homogeneous Crystals(ページ) 7-13(刊行年月日) 2005-03-31
(抄録) The Si(0.5)Ge(0.5) bulk crystals growth has been challenged. Si-Ge homogeneous single crystals are d...
(言語) eng(資料番号) AA0048451001
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