| タイトル | SiC-Based Gas Sensors |
| 本文（外部サイト） | http://hdl.handle.net/2060/19970034707 |
| 著者（英） | Hunter, Gary W.; Liu, C. C.; Neudeck, Philip G.; Knight, Dak; Chen, Liang-Yu; Wu, Q. H. |
| 著者所属（英） | NASA Lewis Research Center |
| 発行日 | 1997-08-01 |
| 言語 | eng |
| 内容記述 | Electronic grade Silicon Carbide (SiC) is a ceramic material which can operate as a semiconductor at temperatures above 600 C. Recently, SiC semiconductors have been used in Schottky diode gas sensor structures. These sensors have been shown to be functional at temperatures significantly above the normal operating range of Si-based devices. SiC sensor operation at these higher temperatures allows detection of gases such as hydrocarbons which are not detectable at lower temperatures. This paper discusses the development of SiC-based Schottky diode gas sensors for the detection of hydrogen, hydrocarbons, and nitrogen oxides (NO(x)). Sensor designs for these applications are discussed. High sensitivity is observed for the hydrogen and hydrocarbon sensors using Pd on SiC Schottky diodes while the NO(x) sensors are still under development. A prototype sensor package has been fabricated which allows high temperature operation in a room temperature ambient by minimizing heat loss to that ambient. It is concluded that SiC-based gas sensors have considerable potential in a variety of gas sensing applications. |
| NASA分類 | Instrumentation and Photography |
| レポートNO | 97N29948
NASA-TM-113125
NAS 1.15:113125
E-10891 |
| 権利 | No Copyright |
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