| タイトル | Hot Carrier Dynamics in the X Valley in Si and Ge Measured by Pump-IR-Probe Absorption Spectroscopy |
| 本文（外部サイト） | http://hdl.handle.net/2060/19970026926 |
| 著者（英） | Alfano, R. R.; Wang, W. B.; Cavicchia, M. A. |
| 著者所属（英） | City Coll. of the City Univ. of New York |
| 発行日 | 1996-01-01
1996 |
| 言語 | eng |
| 内容記述 | Si is the semiconductor of choice for nanoelectronic roadmap into the next century for computer and other nanodevices. With growing interest in Si, Ge, and Si(sub m)Ge(sub n) strained superlattices, knowledge of the carrier relaxation processes in these materials and structures has become increasingly important. The limited time resolution for earlier studies of carrier dynamics in Ge and Si, performed using Nd:glass lasers, was not sufficient to observe the fast cooling processes. In this paper, we present a direct measurement of hot carrier dynamics in the satellite X valley in Si and Ge by time-resolved infrared(IR) absorption spectroscopy, and show the potential of our technique to identify whether the X valley is the lowest conduction valley in semiconductor materials and structures. |
| NASA分類 | Solid-State Physics |
| レポートNO | 97N26046
NASA-CR-204610
NAS 1.26:204610 |
| 権利 | No Copyright |
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