| タイトル | Temperature Dependence of Photoluminescence in InGaAs/InP Strained MQW Heterostructures |
| 本文（外部サイト） | http://hdl.handle.net/2060/19970026872 |
| 著者（英） | Alfano, R. R.; Swaminathan, V.; Raisky, O. Y.; Wang, W. B.; Reynolds, C. L., Jr. |
| 著者所属（英） | City Coll. of the City Univ. of New York |
| 発行日 | 1996-01-01
1996 |
| 言語 | eng |
| 内容記述 | Multiple quantum well (MQW) InGaAsP/InP heterostructure systems have been drawn considerable research interest in recent years due to its suitability for long wavelength optoelectronic devices. The performance of such devices is strongly affected by peculiarities of recombination processes in the quantum wells (QW). The goal of this study was to investigate the effect of barrier width on the radiative recombination of carriers. In our study, the photoluminescence spectra from InGaAsP/lnP MQW double heterostructures have been measured in the 77-290 K temperature range with different excitation intensities. |
| NASA分類 | Solid-State Physics |
| レポートNO | 97N26016
NASA-CR-204611
NAS 1.26:204611 |
| 権利 | No Copyright |
