| タイトル | The Influence of Reduced Gravity on the Crystal Growth of Electronic Materials |
| 本文（外部サイト） | http://hdl.handle.net/2060/19970022892 |
| 著者（英） | Szofran, F. R.; Su, Ching-Hua; Watring, D. A.; Lehoczky, S. L.; Gillies, D. C. |
| 著者所属（英） | NASA Marshall Space Flight Center |
| 発行日 | 1996-01-01
1996 |
| 言語 | eng |
| 内容記述 | The imperfections in the grown crystals of electronic materials, such as compositional nonuniformity, dopant segregation and crystalline structural defects, are detrimental to the performance of the opto-electronic devices. Some of these imperfections can be attributed to effects caused by Earth gravity during crystal growth process and four areas have been identified as the uniqueness of material processing in reduced gravity environment. The significant results of early flight experiments, i.e. prior to space shuttle era, are briefly reviewed followed by an elaborated review on the recent flight experiments conducted on shuttle missions. The results are presented for two major growth methods of electronic materials: melt and vapor growth. The use of an applied magnetic field in the melt growth of electrically conductive melts on Earth to simulate the conditions of reduced gravity has been investigated and it is believed that the superimposed effect of moderate magnetic fields and the reduced gravity environment of space can result in reduction of convective intensities to the extent unreachable by the exclusive use of magnet on Earth or space processing. In the Discussions section each of the significant results of the flight experiments is attributed to one of the four effects of reduced gravity and the unresolved problems on the measured mass fluxes in some of the vapor transport flight experiments are discussed. |
| NASA分類 | Materials Processing |
| レポートNO | 97N23311
AAS- 95-590
NAS 1.15:112495
NASA-TM-112495 |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/101294 |
