| タイトル | AlGaN Channel Transistors for Power Management and Distribution |
| 本文（外部サイト） | http://hdl.handle.net/2060/19970021335 |
| 著者（英） | VanHove, James M. |
| 著者所属（英） | SVT Associates, Inc. |
| 発行日 | 1996-12-30 |
| 言語 | eng |
| 内容記述 | Contained within is the Final report of a Phase 1 SBIR program to develop AlGaN channel junction field effect transistors (JFET). The report summarizes our work to design, deposit, and fabricate JFETS using molecular beam epitaxy growth AlGaN. Nitride growth is described using a RF atomic nitrogen plasma source. Processing steps needed to fabricate the device such as ohmic source-drain contacts, reactive ion etching, gate formation, and air bride fabrication are documented. SEM photographs of fabricated power FETS are shown. Recommendations are made to continue the effort in a Phase 2 Program. |
| NASA分類 | Electronics and Electrical Engineering |
| レポートNO | 97N22336
NASA-CR-201109
NAS 1.26:201109
AD-A319426 |
| 権利 | No Copyright |
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