| タイトル | CW Performance of an InGaAs-GaAs-AlGaAs Laterally-Coupled Distributed Feedback (LC-DFB) Ridge Laser Diode |
| 本文（外部サイト） | http://hdl.handle.net/2060/19970003045 |
| 著者（英） | Chapman, P. F.; Hunsperger, R. G.; Forouhar, S.; Tiberio, R. C.; Martin, R. D.; Keo, S.; Lang, R. J. |
| 著者所属（英） | Jet Propulsion Lab., California Inst. of Tech. |
| 発行日 | 1995-03-01 |
| 言語 | eng |
| 内容記述 | Single-mode distributed feedback (DFB) laser diodes typically require a two-step epitaxial growth or use of a corrugated substrate. We demonstrate InGaAs-GaAs-AlGaAs DFB lasers fabricated from a single epitaxial growth using lateral evanescent coupling of the optical field to a surface grating etehed along the sides of the ridge. A CW threshold current of 25 mA and external quantum efficiency of 0.48 mW/mA per facet were measured for a 1 mm cavity length device with anti-reflection coated facets. Single-mode output powers as high as 11 mW per facet at 935 nm wavelength were attained. A coupling coefficient of at least 5.8/cm was calculated from the subthreshold spectrum taking into account the 2% residual facet reflectivity. |
| NASA分類 | Lasers and Masers |
| レポートNO | 97N11811
NAS 1.26:200347
NASA-CR-200347 |
| 権利 | Copyright, Distribution as joint owner in the copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/102646 |
