| タイトル | Native Defect Related Optical Properties of ZnGeP2 |
| 本文（外部サイト） | http://hdl.handle.net/2060/19970001775 |
| 著者（英） | Ruderman, W.; Wood, G.; Bachmann, K. J.; Dietz, N.; Tsveybak, I. |
| 著者所属（英） | North Carolina State Univ. |
| 発行日 | 1994-11-28 |
| 言語 | eng |
| 内容記述 | We present photoluminescence, photoconductivity, and optical absorption spectra for ZnGeP2 crystals grown from the melt by gradient freezing and from the vapor phase by high pressure physical vapor transport (HPVT). A model of donor and acceptor related subbands in the energy gap of ZnGeP2 is introduced that explains the experimental results. The emission with peak position at 1.2 eV is attributed to residual disorder on the cation sublattice. The lower absorption upon annealing is interpreted in terms of both the reduction of the disorder on the cation sublattice and changes in the Fermi level position. The n-type conductivity of ZnGeP2 Crystals grown under Ge-deficient conditions by the HPVT is related to the presence of additional donor states. |
| NASA分類 | Optics |
| レポートNO | 97N11546
NASA-CR-202489
NAS 1.26:202489 |
| 権利 | Copyright, Distribution as joint owner in the copyright |
