| タイトル | InGaAlAsPN: A Materials System for Silicon Based Optoelectronics and Heterostructure Device Technologies |
| 本文（外部サイト） | http://hdl.handle.net/2060/19960054113 |
| 著者（英） | Kao, Y. -C.; Tang, S.; Beam, E. A., III; Liu, H. -Y.; Broekaert, T. P. E.; Wallace, R. M.; Duncan, W. M. |
| 著者所属（英） | Texas Instruments, Inc. |
| 発行日 | 1995-01-01
1995 |
| 言語 | eng |
| 内容記述 | A new material system is proposed for silicon based opto-electronic and heterostructure devices; the silicon lattice matched compositions of the (In,Ga,Al)-(As,P)N 3-5 compounds. In this nitride alloy material system, the bandgap is expected to be direct at the silicon lattice matched compositions with a bandgap range most likely to be in the infrared to visible. At lattice constants ranging between those of silicon carbide and silicon, a wider bandgap range is expected to be available and the high quality material obtained through lattice matching could enable applications such as monolithic color displays, high efficiency multi-junction solar cells, opto-electronic integrated circuits for fiber communications, and the transfer of existing 3-5 technology to silicon. |
| NASA分類 | Solid-State Physics |
| レポートNO | 96N36359 |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/102932 |
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