| タイトル | Electronic and Interfacial Properties of PD/6H-SiC Schottky Diode Gas Sensors |
| 本文（外部サイト） | http://hdl.handle.net/2060/19960047097 |
| 著者（英） | Neudeck, Philip G.; Liu, Chung-Chiun; Chen, Liang-Yu; Hunter, Gary W.; Knight, Dak; Bansal, Gaurav; Petit, Jeremy B.; Wu, Qinghai |
| 著者所属（英） | NASA Lewis Research Center |
| 発行日 | 1996-06-01 |
| 言語 | eng |
| 内容記述 | Pd/SiC Schottky diodes detect hydrogen and hydrocarbons with high sensitivity. Variation of the diode temperature from 100 C to 200 C shows that the diode sensitivity to propylene is temperature dependent. Long-term heat treating at 425 C up to 140 hours is carried out to determine the effect of extended heat treating on the diode properties and gas sensitivity. The heat treating significantly affects the diode's capacitive characteristics, but the diode's current carrying characteristics are much more stable with a large response to hydrogen. Scanning Electron Microscopy and X-ray Spectrometry studies of the Pd surface after the heating show cluster formation and background regions with grain structure observed in both regions. The Pd and Si concentrations vary between grains. Auger Electron Spectroscopy depth profiles revealed that the heat treating promoted interdiffusion and reaction between the Pd and SiC dw broadened the interface region. This work shows that Pd/SiC Schottky diodes have significant potential as high temperature gas sensors, but stabilization of the structure is necessary to insure their repeatability in long-term, high temperature applications. |
| NASA分類 | Instrumentation and Photography |
| レポートNO | 96N32871
NASA-TM-107255
E-10316
NAS 1.15:107255 |
| 権利 | No Copyright |
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