| タイトル | Ensemble Monte Carlo calculation of the hole initiated impact ionization rate in bulk GaAs and silicon using a k-dependent, numerical transition rate formulation |
| 本文（外部サイト） | http://hdl.handle.net/2060/19960027053 |
| 著者（英） | Oguzman, Ismail H.; Kolnik, Jan; Wang, Yang; Brennan, Kevin F. |
| 著者所属（英） | Georgia Tech Research Inst. |
| 発行日 | 1995-01-01
1995 |
| 言語 | eng |
| 内容記述 | The hole initiated impact ionization rate in bulk silicon and GaAs is calculated using a numerical formulation of the impact ionization transition rate incorporated into an ensemble Monte Carlo simulation. The transition rate is calculated from Fermi's golden rule using a two-body screened Coulomb interaction including a wavevector dependent dielectric function. It is found that the effective threshold for hole initiated ionization is relatively soft in both materials, that the split-off band dominates the ionization process in GaAs. and that no clear dominance by any one band is observed in silicon, though the rate out of the light hole band is greatest. |
| NASA分類 | Solid-State Physics |
| レポートNO | 96N28548
NASA-CR-201100
NAS 1.26:201100 |
| 権利 | Copyright, Distribution as joint owner in the copyright |
