| タイトル | Two Carrier Analysis of Persistent Photoconductivity in Modulation-Doped Structures |
| 本文（外部サイト） | http://hdl.handle.net/2060/19960016614 |
| 著者（英） | Mena, R. A.; Alterovitz, S. A.; Schacham, S. E.; Haugland, E. J. |
| 著者所属（英） | NASA Lewis Research Center |
| 発行日 | 1995-07-01 |
| 言語 | eng |
| 内容記述 | A simultaneous fit of Hall and conductivity data gives quantitative results on the carrier concentration and mobility in both the quantum well and the parallel conduction channel. In this study this method was applied to reveal several new findings on the effect of persistent photoconductivity (PPC) on free-carrier concentrations and mobilities. The increase in the two-dimensional electron-gas (2DEG) concentration is significantly smaller than the apparent one derived from single carrier analysis of the Hall coefficient. In the two types of structures investigated, delta doped and continuously doped barrier, the apparent concentration almost doubles following illumination, while analysis reveals an increase of about 20% in the 2DEG. The effect of PPC on mobility depends on the structure. For the sample with a continuously doped barrier the mobility in the quantum well more than doubles. This increase is attributed to the effective screening of the ionized donors by the large electron concentration in the barrier. In the delta doped barrier sample the mobility is reduced by almost a factor of 2. This decrease is probably caused by strong coupling between the two wells, as is demonstrated by self-consistent analysis. |
| NASA分類 | Solid-State Physics |
| レポートNO | 96N22253
NASA-TM-111234
E-9287
NAS 1.15:111234
E-9148 |
| 権利 | Copyright, Distribution as joint owner in the copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/104637 |
