反射高速電子回折における入射電子波動場の計算

Abstract

Conventional reflection high-energy electron diffraction (RHEED) method analyzes crystal surface structures from the geometries and the intensities of the diffraction spots. This method focuses on the electrons which are reflected from a crystal surface toward a vacuum. On the other hand, the density distribution of incident electrons, which is called as “wave field”, around a crystal surface is important for understanding the behavior of the incident electrons, but it has not been studied so much so far. Here, a calculation method of the wave field formed by incident electrons is presented and some calculated results for Al adsorbed surface structures on Si(111) and Si(001) substrates are demonstrated.