| タイトル | High quality InP-on-Si for solar cell applications |
| 本文（外部サイト） | http://hdl.handle.net/2060/19950014094 |
| 著者（英） | Collins, Sandra R.; Dinetta, Louis C.; Shellenbarger, Zane A.; Goodwin, Thomas A. |
| 著者所属（英） | Astropower, Inc. |
| 発行日 | 1994-09-01 |
| 言語 | eng |
| 内容記述 | InP on Si solar cells combine the low-cost and high-strength of Si with the high efficiency and radiation tolerance of InP. The main obstacle in the growth of single crystal InP-on-Si is the high residual strain and high dislocation density of the heteroepitaxial InP films. The dislocations result from the large differences in lattice constant and thermal expansion mismatch of InP and Si. Adjusting the size and geometry of the growth area is one possible method of addressing this problem. In this work, we conducted a material quality study of liquid phase epitaxy overgrowth layers on selective area InP grown by a proprietary vapor phase epitaxy technique on Si. The relationship between growth area and dislocation density was quantified using etch pit density measurements. Material quality of the InP on Si improved both with reduced growth area and increased aspect ratio (length/width) of the selective area. Areas with etch pit density as low as 1.6 x 10(exp 4) sq cm were obtained. Assuming dislocation density is an order of magnitude greater than etch pit density, solar cells made with this material could achieve the maximum theoretical efficiency of 23% at AMO. Etch pit density dependence on the orientation of the selective areas on the substrate was also studied. |
| NASA分類 | ENERGY PRODUCTION AND CONVERSION |
| レポートNO | 95N20510 |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/108626 |
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