| タイトル | Characteristics of III-V Semiconductor Devices at High Temperature |
| 本文（外部サイト） | http://hdl.handle.net/2060/19940028546 |
| 著者（英） | Alterovitz, Samuel A.; Young, Paul G.; Simons, Rainee N.; Taub, Susan R. |
| 著者所属（英） | NASA Lewis Research Center |
| 発行日 | 1994-06-01 |
| 言語 | eng |
| 内容記述 | This paper presents the development of III-V based pseudomorphic high electron mobility transistors (PHEMT's) designed to operate over the temperature range 77 to 473 K (-196 to 200 C). These devices have a pseudomorphic undoped InGaAs channel that is sandwiched between an AlGaAs spacer and a buffer layer; gate widths of 200, 400, 1600, and 3200 micrometers; and a gate length of 2 micrometers. Measurements were performed at both room temperature and 473 K (200 C) and show that the drain current decreases by 30 percent and the gate current increases to about 9 microns A (at a reverse bias of -1.5 V) at the higher temperature. These devices have a maximum DC power dissipation of about 4.5 W and a breakdown voltage of about 16 V. |
| NASA分類 | ELECTRONICS AND ELECTRICAL ENGINEERING |
| レポートNO | 94N33052
NASA-TM-106574
E-8801
NAS 1.15:106574 |
| 権利 | No Copyright |
