| タイトル | Development of Si(1-x)Ge(x) technology for microwave sensing applications |
| 本文（外部サイト） | http://hdl.handle.net/2060/19930019421 |
| 著者（英） | Young, Paul E.; Taub, Susan R.; Simons, Rainee N.; Rosenfeld, David; Alterovitz, Samuel A.; Mena, Rafael A. |
| 著者所属（英） | NASA Lewis Research Center |
| 発行日 | 1993-05-01 |
| 言語 | eng |
| 内容記述 | The progress for the first year of the work done under the Director's Discretionary Fund (DDF) research project entitled, 'Development of Si(1-x)Ge(x) Technology for Microwave Sensing Applications.' This project includes basic material characterization studies of silicon-germanium (SiGe), device processing on both silicon (Si) and SiGe substrates, and microwave characterization of transmission lines on silicon substrates. The material characterization studies consisted of ellipsometric and magneto-transport measurements and theoretical calculations of the SiGe band-structure. The device fabrication efforts consisted of establishing SiGe device processing capabilities in the Lewis cleanroom. The characterization of microwave transmission lines included studying the losses of various coplanar transmission lines and the development of transitions on silicon. Each part of the project is discussed individually and the findings for each part are presented. Future directions are also discussed. |
| NASA分類 | ELECTRONICS AND ELECTRICAL ENGINEERING |
| レポートNO | 93N28610
NASA-TM-106157
E-7843
NAS 1.15:106157 |
| 権利 | No Copyright |
