| タイトル | Diffusion length variation in 0.5- and 3-MeV-proton-irradiated, heteroepitaxial indium phosphide solar cells |
| 本文（外部サイト） | http://hdl.handle.net/2060/19930017813 |
| 著者（英） | Flood, Dennis J.; Jain, Raj K.; Weinberg, Irving |
| 著者所属（英） | NASA Lewis Research Center |
| 発行日 | 1993-04-01 |
| 言語 | eng |
| 内容記述 | Indium phosphide (InP) solar cells are more radiation resistant than gallium arsenide (GaAs) and silicon (Si) solar cells, and their growth by heteroepitaxy offers additional advantages leading to the development of light weight, mechanically strong, and cost-effective cells. Changes in heteroepitaxial InP cell efficiency under 0.5- and 3-MeV proton irradiations have been explained by the variation in the minority-carrier diffusion length. The base diffusion length versus proton fluence was calculated by simulating the cell performance. The diffusion length damage coefficient, K(sub L), was also plotted as a function of proton fluence. |
| NASA分類 | ELECTRONICS AND ELECTRICAL ENGINEERING |
| レポートNO | 93N27002
NASA-TM-106147
E-7792
NAS 1.15:106147 |
| 権利 | No Copyright |
