| タイトル | Thermal degradation study of silicon carbide threads developed for advanced flexible thermal protection systems |
| 本文（外部サイト） | http://hdl.handle.net/2060/19920023232 |
| 著者（英） | Sawko, Paul M.; Tran, Huy Kim |
| 著者所属（英） | NASA Ames Research Center |
| 発行日 | 1992-08-01 |
| 言語 | eng |
| 内容記述 | Silicon carbide (SiC) fiber is a material that may be used in advanced thermal protection systems (TPS) for future aerospace vehicles. SiC fiber's mechanical properties depend greatly on the presence or absence of sizing and its microstructure. In this research, silicon dioxide is found to be present on the surface of the fiber. Electron Spectroscopy for Chemical Analysis (ESCA) and Scanning Electron Microscopy (SEM) show that a thin oxide layer (SiO2) exists on the as-received fibers, and the oxide thickness increases when the fibers are exposed to high temperature. ESCA also reveals no evidence of Si-C bonding on the fiber surface on both as-received and heat treated fibers. The silicon oxide layer is thought to signal the decomposition of SiC bonds and may be partially responsible for the degradation in the breaking strength observed at temperatures above 400 C. The variation in electrical resistivity of the fibers with increasing temperature indicates a transition to a higher band gap material at 350 to 600 C. This is consistent with a decomposition of SiC involving silicon oxide formation. |
| NASA分類 | NONMETALLIC MATERIALS |
| レポートNO | 92N32476
A-92146
NASA-TM-103952
NAS 1.15:103952 |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/126193 |
