| タイトル | Defect behavior, carrier removal and predicted in-space injection annealing of InP solar cells |
| 本文（外部サイト） | http://hdl.handle.net/2060/19920014319 |
| 著者（英） | Weinberg, I.; Drevinsky, P. J.; Swartz, C. K. |
| 著者所属（英） | NASA Lewis Research Center |
| 発行日 | 1992-01-01 |
| 言語 | eng |
| 内容記述 | Defect behavior, observed by deep level transient spectroscopy (DLTS), is used to predict carrier removal and the effects of simultaneous electron irradiation and injection annealing of the performance of InP solar cells. For carrier removal, the number of holes trapped per defect is obtained from measurements of both carrier concentrations and defect concentrations during an isochronal anneal. In addition, from kinetic considerations, the behavior of the dominant defect during injection annealing is used to estimate the degradation expected from exposure to the ambient electron environment in geostationary orbit. |
| NASA分類 | ELECTRONICS AND ELECTRICAL ENGINEERING |
| レポートNO | 92N23562
NAS 1.15:105624
E-6963
NASA-TM-105624 |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/127440 |
