タイトル | GaAs (AlGaAs)/CuInSe2 tandem solar cells. Technology status and future directions |
本文(外部サイト) | http://hdl.handle.net/2060/19910020903 |
著者(英) | Gale, R. P.; Burgess, R. M.; Mcclelland, R. W.; Kim, N. P. |
著者所属(英) | Boeing Aerospace Co. |
発行日 | 1991-08-01 |
言語 | eng |
内容記述 | Mechanically stacked, high efficiency, lightweight, and radiation resistant photovoltaic cells based on a GaAs thin film top and CuInSe2 thin film bottom cells were developed, and are considered one of the most promising devices for planar solar array applications. The highest efficiency demonstrated so far using the 4 sq cm design is 23.1 pct. AM0, one sun efficiency when measured in four-terminal configuration. The current status of the GaAs(AlGaAs)/CuInSe2 tandem cell program is presented and future directions that will lead to cell efficiencies higher than 26 pct. Air Mass Zero (AM0). A new 8 sq cm cell design developed for a two terminal and voltage matched configuration to minimize wiring complexity is discussed. Optimization of the GaAs structure for a higher end-of-life performance and further improvement of tandem cells by utilizing AlGaAs as an top absorber are described. Results of environmental tests conducted with these thin film GaAs/CuInSe2 tandem cells are also summarized. |
NASA分類 | SPACECRAFT PROPULSION AND POWER |
レポートNO | 91N30217 |
権利 | No Copyright |
URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/131224 |
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