| タイトル | Silicon carbide, an emerging high temperature semiconductor |
| 本文（外部サイト） | http://hdl.handle.net/2060/19910014748 |
| 著者（英） | Matus, Lawrence G.; Powell, J. Anthony |
| 著者所属（英） | NASA Lewis Research Center |
| 発行日 | 1991-01-01 |
| 言語 | eng |
| 内容記述 | In recent years, the aerospace propulsion and space power communities have expressed a growing need for electronic devices that are capable of sustained high temperature operation. Applications for high temperature electronic devices include development instrumentation within engines, engine control, and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Other earth-based applications include deep-well drilling instrumentation, nuclear reactor instrumentation and control, and automotive sensors. To meet the needs of these applications, the High Temperature Electronics Program at the Lewis Research Center is developing silicon carbide (SiC) as a high temperature semiconductor material. Research is focussed on developing the crystal growth, characterization, and device fabrication technologies necessary to produce a family of silicon carbide electronic devices and integrated sensors. The progress made in developing silicon carbide is presented, and the challenges that lie ahead are discussed. |
| NASA分類 | SOLID-STATE PHYSICS |
| レポートNO | 91N24061 |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/132529 |
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