| タイトル | Heteroepitaxial InP solar cells on Si and GaAs substrates |
| 本文（外部サイト） | http://hdl.handle.net/2060/19910011079 |
| 著者（英） | Brinker, David J.; Weinberg, Irving; Swartz, Clifford K. |
| 著者所属（英） | NASA Lewis Research Center |
| 発行日 | 1990-01-01 |
| 言語 | eng |
| 内容記述 | The characteristics of InP cells processed from thin layers of InP heteroepitaxially grown on GaAs, on silicon with an intervening GaAs layer, and on GaAs with intervening Ga(x)In(1-x)As layers are described, and the factors affecting cell efficiency are discussed. Under 10 MeV proton irradiations, the radiation resistances of the heteroepitaxial cells were superior to that of homoepitaxial InP cells. The superior radiation resistance is attributed to the high dislocation densities present in the heteroepitaxial cells. |
| NASA分類 | ELECTRONICS AND ELECTRICAL ENGINEERING |
| レポートNO | 91N20392
NASA-TM-103696
E-5918
NAS 1.15:103696 |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/133506 |
