| タイトル | High-efficiency, radiation-resistant GaAs space cells |
| 本文（外部サイト） | http://hdl.handle.net/2060/19910009881 |
| 著者（英） | Grounner, M.; Kuryla, M. S.; Bertness, K. A.; Werthen, J. G.; Ristow, M. Ladle |
| 著者所属（英） | Varian Associates |
| 発行日 | 1991-01-01 |
| 言語 | eng |
| 内容記述 | Although many GaAs solar cells are intended for space applicatons, few measurements of cell degradation after radiation are available, particularly for cells with efficiencies exceeding 20 percent (one-sun, AMO). Often the cell performance is optimized for the highest beginning-of-life (BOL) efficiency, despite the unknown effect of such design on end-of-life (EOL) efficiencies. The results of a study of the radiation effects on p-n GaAs cells are presented. The EOL efficiency of GaAs space cell can be increased by adjusting materials growth parameters, resulting in a demonstration of 16 percent EOL efficiency at one-sun, AMO. Reducing base doping levels to below 3 x 10(exp 17)/cu m and decreasing emitter thickness to 0.3 to 0.5 micron for p-n cells led to significant improvements in radiation hardness as measured by EOL/BOL efficiency ratios for irradiation of 10(exp -15)/sq cm electrons at 1 MeV. BOL efficiency was not affected by changes in emitter thickness but did improve with lower base doping. |
| NASA分類 | ENERGY PRODUCTION AND CONVERSION |
| レポートNO | 91N19194 |
| 権利 | No Copyright |
| URI | https://repository.exst.jaxa.jp/dspace/handle/a-is/133754 |
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